VISHAY VSSB420S-M3-5BT

New Product
VSSB420S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AA (SMB)
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V
IFSM
40 A
VF at IF = 4.0 A
0.71 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
VSSB420S
UNIT
V4D
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
VRRM
200
V
IF
(1)
4.0
IF
(2)
1.8
IFSM
40
A
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
A
Notes
(1) Units mounted on PCB with 20 mm x 20 mm pad areas
(2) Free air, mounted on recommended PCB 1 oz. pad area
Document Number: 89317
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
[email protected], DiodesAsi[email protected], [email protected]
www.vishay.com
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New Product
VSSB420S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA = 25 °C
IF = 4.0 A
Instantaneous forward voltage
TA = 125 °C
VR = 180 V
Reverse current per diode
VR = 200 V
Typical junction capacitance
SYMBOL
VF (1)
TA = 25 °C
IR (2)
TA = 125 °C
4.0 V, 1 MHz
MAX.
UNIT
1.44
1.90
0.71
0.80
3
-
μA
0.7
-
mA
4
150
μA
1.1
10
mA
120
-
pF
V
TA = 25 °C
TA = 125 °C
TYP.
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
VSSB420S
(1)
UNIT
120
°C/W
RJM (2)
15
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSB420S-M3/52T
0.096
52T
750
7" diameter plastic tape and reel
VSSB420S-M3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
4
D = 0.5
3.5
4.0
Average Power Loss (W)
Average Forward Rectified Current (A)
5.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
D = 0.2
3.0
2.5
D = 1.0
D = 0.1
2.0
T
1.5
1.0
D = tp/T
0.5
TM Measured at Terminal
0.5
D = 0.8
D = 0.3
tp
0
0
0
25
50
75
100
125
150
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89317
Revision: 10-Nov-10
New Product
VSSB420S
Vishay General Semiconductor
1000
10
TA = 100 °C
TA = 125 °C
1
100
TA = 25 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
1
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
20
30
40
50
60
70
80
90
100
10
1
0.01
0.00001
10
Junction to Ambient
100
1
0.1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.008 (0.2)
0 (0)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Document Number: 89317
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Document Number: 91000
Revision: 11-Mar-11
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