VISHAY VF30150C

New Product
VF30150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
1
2
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
• Halogen-free according to IEC 61249-2-21 definition
VF30150C
PIN 1
TYPICAL APPLICATIONS
PIN 2
PIN 3
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
150 V
IFSM
140 A
VF at IF = 15 A
0.71 V
TJ max.
150 °C
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum average forward rectified current
(fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VF30150C
UNIT
30
per device
IF(AV)
A
15
IFSM
140
A
dV/dt
10 000
V/μs
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Voltage rate of change (rated VR)
Document Number: 89270
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
VF30150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 7.5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 15 A
VF (1)
IF = 5 A
IF = 15 A
TA = 25 °C
VR = 100 V
TA = 125 °C
Reverse current per diode
IR (2)
TA = 25 °C
VR = 150 V
MAX.
UNIT
0.72
-
0.81
-
1.11
1.36
0.56
-
0.61
-
0.71
0.79
1.5
-
μA
2.0
-
mA
-
200
μA
4
20
mA
V
TA = 125 °C
IF = 7.5 A
TYP.
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF30150C
UNIT
RθJC
4.5
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.75
4W
50/tube
Tube
VF30150C-M3/4W
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
14
D = 0.8
Resistive or Inductive Load
D = 0.5
12
Average Power Loss (W)
Average Forward Rectified Current (A)
40
30
20
10
D = 0.3
D = 0.2
10
8
D = 1.0
D = 0.1
6
T
4
2
D = tp/T
Mounted on Specific Heatsink
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89270
Revision: 10-Nov-10
New Product
VF30150C
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
TA = 150 °C
10
Junction Capacitance (pF)
Instantaneous Reverse Current (mA)
1
0.1
0.01
1.6
1.4
Junction to Case
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
10
20
30
40
50
60
70
80
90
0.1
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Document Number: 89270
Revision: 10-Nov-10
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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