FREESCALE MMG1001T1

Freescale Semiconductor
Technical Data
Document Number: MMG1001
Rev. 5, 7/2005
Will be replaced by MMG1001NT1 in Q305. N suffix indicates 260°C reflow capable.
The PFP-16 package has had lead-free terminations from its initial release.
MMG1001R2
MMG1001T1
Gallium Arsenide
CATV Integrated Amplifier Module
Features
• Specified for 79 -, 112 - and 132 -Channel Loading
• Excellent Distortion Performance
• Built-in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel.
Applications
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV
Integrated Forward Amplifier Module
870 MHz
19 dB GAIN
132 -CHANNEL
CATV INTEGRATED AMPLIFIER
MODULE
16
1
CASE 978-03
PFP-16
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+65
dBmV
DC Supply Voltage
24 V Application
12 V Application
VCC
Vdc
+26
+14
Operating Case Temperature Range
TC
-20 to +100
°C
Storage Temperature Range
Tstg
-40 to +100
°C
Symbol
Value
Unit
RθJC
6.6
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pin 3
Pin 15
Q3
Q1
Pin 4
RG3
RS1
Pin 5
Pin 13
RS2
RG4
Pin 6
Q2
Q4
Pin 7
Figure 1. Functional Diagram
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Pin 11
N.C.
1
16
N.C.
N.C.
2
15
VD3
VG1
3
14
N.C.
VS1
4
13
VGC
VC
5
12
N.C.
VS2
6
11
VD4
VG2
N.C.
7
8
10
9
N.C.
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
MMG1001R2 MMG1001T1
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (minimum)
Machine Model
M1 (minimum)
Charge Device Model
C5 (minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22-A113, IPC/JEDEC J-STD-020
Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
—
—
18
19
—
—
dB
Slope
40 - 870 MHz
S
—
0.6
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
GF
—
0.5
—
dB
Input Return Loss (Zo = 75 Ohms)
IRL
—
—
21
19
22
—
—
—
—
—
22
17
—
—
Output Return Loss (Zo = 75 Ohms)
f = 40-160 MHz
f = 161-450 MHz
f = 451-870 MHz
dB
ORL
f = 40-400 MHz
f = 401-870 MHz
dB
Composite Second Order
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
CSO132
CSO112
CSO79
—
—
—
-65
-65
-71
-58
-59
-62
Cross Modulation Distortion @ Ch 2
(Vout = +44 dBmV/ch., FM = 55 MHz)
(Vout = +46 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
XMD132
XMD112
XMD79
—
—
—
-64
-63
-62
-52
-52
-52
Composite Triple Beat
(Vout = +44 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
CTB132
CTB112
CTB79
—
—
—
-63
-64
-65
-56
-56
-58
NF
—
—
4
4
5.0
5.0
IDC
230
250
265
Noise Figure
dBc
dBc
dBc
50 MHz
870 MHz
DC Current (VDC = 24 V, TC = -20° to +100°C)
dB
mA
(continued)
MMG1001R2 MMG1001T1
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
(continued)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
50 MHz
870 MHz
Gp
—
—
18
19
—
—
dB
Slope
40 - 870 MHz
S
—
0.6
—
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
GF
—
0.5
—
dB
Input Return Loss (Zo = 75 Ohms)
IRL
—
—
21
19
19
—
—
—
—
—
—
19
17
15
—
—
—
Output Return Loss (Zo = 75 Ohms)
f = 40-160 MHz
f = 161-450 MHz
f = 451-870 MHz
dB
ORL
f = 40-400 MHz
f = 401-750 MHz
f = 751-870 MHz
dB
Composite Second Order
(Vout = +42 dBmV/ch., Worst Case)
(Vout = +42 dBmV/ch., Worst Case)
112-Channel FLAT
79-Channel FLAT
CSO112
CSO79
—
—
-65
-71
—
—
Cross Modulation Distortion @ Ch 2
(Vout = +42 dBmV/ch., FM = 55 MHz)
(Vout = +42 dBmV/ch., FM = 55 MHz)
112-Channel FLAT
79-Channel FLAT
XMD112
XMD79
—
—
-63
-62
—
—
Composite Triple Beat
(Vout = +42 dBmV/ch., Worst Case)
(Vout = +42 dBmV/ch., Worst Case)
112-Channel FLAT
79-Channel FLAT
CTB112
CTB79
—
—
-64
-65
—
—
NF
—
—
4
4
5.0
5.0
dB
IDC
190
210
225
mA
Noise Figure
dBc
dBc
dBc
50 MHz
870 MHz
DC Current (VDC = 12 V, TC = -20° to +100°C)
MMG1001R2 MMG1001T1
RF Device Data
Freescale Semiconductor
3
C10
C7
R13
R9
Pin 15
Pin 4
C3
RF
INPUT
T1
Pin 3
C5
R11
T2
R18 Pin 5
C12
R12 C6
Pin 11
RF
OUTPUT
C11
VCC
C4
C8
C9
D2
R16
Pin 7
R10
R17
Pin 13 R15
Pin 6
C1
L1
D3
L2
R14
R1
R19
R2
R3
D1
R4
R7
R6
Q2
Q1
C2
R5
R8
Figure 3. MMG1001 50 -870 MHz Test Circuit Schematic
Table 6. MMG1001 50 -870 MHz Test Circuit Component Designations and Values
Designation
Description (24 V Application)
Description (12 V Application)
C1, C7, C8, C11
220 pF Chip Capacitors (0603)
220 pF Chip Capacitors (0603)
C2, C3, C4, C9, C10
0.01 mF Chip Capacitors (0603)
0.01 mF Chip Capacitors (0603)
C5, C6
1.8 pF Chip Capacitors (0603)
1.8 pF Chip Capacitors (0603)
C12
5.6 pF Chip Capacitor (0603)
5.6 pF Chip Capacitor (0603)
D1
5.1 V Zener Diode, On/MM3Z5V1T1
5.1 V Zener Diode, On/MM3Z5V1T1
D2
27 V Zener Diode, On/MM3Z27VT1
27 V Zener Diode, On/MM3Z27VT1
D3
Transient Voltage Suppressor,
On/1.5k27A/1.5SMC27AT3
Transient Voltage Suppressor,
On/1.5k27A/1.5SMC27AT3
L1, L2
22 nH Chip Inductors (0603)
22 nH Chip Inductors (0603)
Q1, Q2
Dual Transistors Package, On/MBT3904DW1T1
Dual Transistors Package, On/MBT3904DW1T1
R1
2.2 kW, 1/4 W Chip Resistor (1206)
820 W, 1/4 W Chip Resistor (1206)
R2
560 W Chip Resistor (0603)
560 W Chip Resistor (0603)
R3
82 W Chip Resistor (0603)
40 W Chip Resistor (0603)
R4
820 W Chip Resistors (0603)
150 W Chip Resistors (0603)
R5
820 W Chip Resistors (0603)
100 W Chip Resistors (0603)
R6
120 W Chip Resistor (0603)
120 W Chip Resistor (0603)
R7
1.5 kW Chip Resistor (0603)
1.5 kW Chip Resistor (0603)
R8
12 W, 1 W Chip Resistor (2512)
4.8 W, 1 W Chip Resistor (2512)
R9, R10, R15
470 W Chip Resistors (0603)
470 W Chip Resistors (0603)
R11, R12
18 W Chip Resistors (0603)
18 W Chip Resistors (0603)
R13, R14
910 W Chip Resistors (0603)
910 W Chip Resistors (0603)
R16
2 kW Chip Resistor (0603)
2.7 kW Chip Resistor (0603)
R17
6.2 kW Chip Resistor (0603)
6.2 kW Chip Resistor (0603)
R18
15 W Chip Resistor (0603)
15 W Chip Resistor (0603)
R19
0 W Chip Resistor (0603)
0 W Chip Resistor (0603)
T1
Input Transformer, Mot/77PC016E068
Input Transformer, 77PC016E068
T2
Output Transformer, Mot/77PC016E061
Output Transformer, 77PC016E061
PCB
FR4, 62 mil, εr = 4.81
FR4, 62 mil, εr = 4.81
MMG1001R2 MMG1001T1
4
RF Device Data
Freescale Semiconductor
MMG1001R2
Rev 0
R16
R5
R7
R19
C7
R9
Q1
R11
Q2
T1
R8
C1
L1
C3
C9
R15
C5
R6
C2
R13
T2
L2
R18
C6
C12
C4
R10 R12
C8
D2
R14
C11
R17
C10
R3
R2
R4
R1
D1
D3
GND
Not
Active
VCC
Note: 24 V Application, VCC = 24 V
12 V Application, VCC = 12 V
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the
Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MMG1001 50 -870 MHz Test Circuit Component Layout
MMG1001R2 MMG1001T1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS FOR 24 V APPLICATION
CTB, COMPOSITE TRIPLE BEAT (dBc)
−60
48 dBmV
46 dBmV
−65
50 dBmV
44 dBmV
−70
42 dBmV
79−Channel Loading, Flat
−75
200
0
400
600
f, FREQUENCY (MHz)
Figure 5. Composite Triple Beat versus
Frequency
CSO, COMPOSITE SECOND ORDER (dBc)
−65
48 dBmV
50 dBmV
46 dBmV
−70
−75
42 dBmV
−80
44 dBmV
79−Channel Loading, Flat
−85
0
200
400
600
f, FREQUENCY (MHz)
XMD, CROSS MODULATION DISTORTION (dBc)
Figure 6. Composite Second Order versus
Frequency
−55
48 dBmV
50 dBmV
−60
46 dBmV
−65
44 dBmV
42 dBmV
−70
79−Channel Loading, Flat
−75
0
200
400
600
f, FREQUENCY (MHz)
Figure 7. Cross Modulation Distortion versus
Frequency
MMG1001R2 MMG1001T1
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D1
e/2
D
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
b1
Y
c
A A2
DATUM
PLANE
SEATING
PLANE
H
b
aaa
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W-W
L1
C
c1
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978-03
ISSUE C
PFP -16
MMG1001R2 MMG1001T1
RF Device Data
Freescale Semiconductor
7
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MMG1001R2 MMG1001T1
Document Number: MMG1001
8Rev. 5, 7/2005
RF Device Data
Freescale Semiconductor