MIG75Q7CSB1X MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG75Q7CSB1X (1200V/75A 7in1) High Power Switching Applications Motor Control Applications • Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. • The electrodes are isolated from case. • VCE (sat) = 2.2 V (typ.) • UL recognized File No. E87989 • Weight: 278 g (typ.) Equivalent Circuit 20 19 18 FO IN VD GND GND VS OUT 17 16 VD (U) 8. 15. 14 FO IN VD GND GND GND VS OUT VS 12 11 10 13 FO IN VD GND W 1. 15 OUT V 9 8 7 6 FO IN VD GND GND IN FO VD GND IN FO VD GND GND GND VS OUT U VS OUT VS 4 5 OUT B 3 2 1 GND IN FO VD GND VS OUT N 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) P FO (V) 7. IN (V) 13. VD (L) 14. FO (L) 20. GND (L) 2004-10-01 1/10 MIG75Q7CSB1X Package Dimensions Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 2/10 MIG75Q7CSB1X Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2004-10-01 3/10 MIG75Q7CSB1X Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Ratings Unit P-N power terminal VCC 900 V ⎯ VCES 1200 V Collector-emitter voltage Inverter Collector current Tc = 25°C, DC IC 75 A Forward current Tc = 25°C, DC IF 75 A Collector power dissipation Tc = 25°C PC 830 W ⎯ Junction temperature Supply voltage Tj 150 °C P-N power terminal VCC 900 V ⎯ VCES 1200 V IC 40 A ⎯ VR 1200 V Collector-emitter voltage Tc = 25°C, DC Collector current Brake Reverse voltage Forward current Tc = 25°C, DC IF 40 A Collector power dissipation Tc = 25°C PC 500 W ⎯ Junction temperature Tj 150 °C Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND terminal VFO 20 V Fault output current FO sink current IFO 14 mA Tc −20~+100 °C Control ⎯ Operating temperature ⎯ Storage temperature range Module Tstg −40~+125 °C VISO 2500 V Isolation voltage AC 1 minute Screw torque (terminal) M4 ⎯ 2 N·m Screw torque (mounting) M5 ⎯ 3 N·m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Switching time Symbol Test Condition Min Typ. Max Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C ⎯ 2.2 2.6 Tj = 125°C ⎯ ⎯ 3.0 ⎯ 2.4 2.8 ton ⎯ 2.0 3.0 tc (on) ⎯ 0.3 ⎯ ⎯ 0.3 ⎯ ⎯ 1.5 2.5 ⎯ 0.4 ⎯ ICEX VCE (sat) VF trr toff tc (off) VCE = 1200 V VD = 15 V, IC = 75 A, VIN = 15 V → 0 V IF = 75 A, Tj = 25°C VCC = 600 V, IC = 75 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) Unit mA V V µs Note 1: Switching time test circuit and timing chart. 2004-10-01 4/10 MIG75Q7CSB1X 2. Brake Stage Characteristic Collector cut-off current Symbol ICEX Collector-emitter saturation voltage Reverse current Forward voltage VCE (sat) Test Condition VCE = 1200 V VD = 15 V, IC = 40 A, VIN = 15 V → 0 V IR VR = 1200 V VF IF = 40 A, Tj = 25°C Min Typ. Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 Tj = 25°C ⎯ 2.2 2.6 Tj = 125°C ⎯ ⎯ 3.0 Tj = 25°C ⎯ ⎯ 1 Tj = 125°C ⎯ ⎯ 10 ⎯ 1.7 2.1 ⎯ 2.0 3.0 ⎯ 0.75 ⎯ ⎯ 0.7 ⎯ ⎯ 1.5 2.5 ⎯ 0.3 ⎯ Min Typ. Max ⎯ 13 17 ⎯ 52 68 ton tc (on) Switching time trr toff VCC = 600 V, IC = 40 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) tc (off) Max Unit mA V mA V µs Note 1: Switching time test circuit and timing chart. 3. Control Stage (Tj = 25°C) Characteristic Control circuit current Symbol High side ID (H) Low side ID (L) Test Condition VD = 15 V Unit mA Input-on signal voltage VIN (on) VD = 15 V 1.4 1.6 1.8 V Input-off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V 8 10 12 ⎯ ⎯ 0.1 VD = 15 V, Tj < = 125°C 120 ⎯ ⎯ 65 ⎯ ⎯ VD = 15 V, Tj < = 125°C 120 ⎯ ⎯ 65 ⎯ ⎯ ⎯ 5 ⎯ 110 118 125 ⎯ 98 ⎯ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit Inverter IGBT stage ⎯ ⎯ 0.15 Inverter FRD stage ⎯ ⎯ 0.35 Brake IGBT stage ⎯ ⎯ 0.25 Brake FRD stage ⎯ ⎯ 0.6 Compound is applied ⎯ 0.017 ⎯ Protection IFO (on) Normal IFO (off) Fault output current Over current protection trip level Short-circuit current protection trip level Inverter Brake Inverter Control supply under voltage protection SC Brake Over current cut-off time Over temperature protection OC toff (OC) Trip level OT Reset level OTr Trip level UV Reset level UVr Fault output pulse width tFO VD = 15 V VD = 15 V Case temperature ⎯ VD = 15 V mA A A µs °C V 4. Thermal Resistance (Tc = 25°C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 2004-10-01 °C/W °C/W 5/10 MIG75Q7CSB1X Switching Time Test Circuit Intelligent power module TLP559 (IGM) P VD 0.1 µF 15 kΩ OUT IN VS 22 µF 15 V GND GND U (V, W, B) VCC VD IF = 16 mA 0.1 µF 15 kΩ OUT IN PG VS 22 µF 15 V GND N GND Timing Chart Input Pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% 10% 10% 10% tc (on) tc (off) toff 20% Irr trr ton 2004-10-01 6/10 MIG75Q7CSB1X 5. Recommended conditions for application Characteristic Symbol VCC Supply voltage Control supply voltage VD Carrier frequency fc Min Typ. Max Unit ⎯ 600 800 V 13.5 15 16.5 V PWM Control ⎯ ⎯ 20 kHz Switching time test circuit (see page.6) (Note 2) 3 ⎯ ⎯ µs P-N Power terminal VD-GND Signal terminal tdead Dead time Test Condition Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG75Q7CSB1X IC – VCE IC – VCE 150 VD = 15 V IC (A) VD = 15 V VD = 17 V 100 VD = 13 V Collector current Collector current IC (A) 150 50 VD = 17 V VD = 13 V 100 50 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Tj = 125°C 4 Collector-emitter voltage VCE 0 0 5 1 (V) 2 Collector-emitter voltage Switching time – IC toff (µs) tc (off) Switching time (µs) Switching time (V) 1 0.3 tc (on) 0.1 Tj = 25°C VCC = 600 V 20 30 40 50 60 70 toff 1 tc (off) tc (on) 0.3 0.1 Tj = 125°C VCC = 600 V 0.03 VD = 15 V L-LOAD 10 ton 3 ton 0.03 0.01 0 80 VD = 15 V L-LOAD 10 20 30 40 50 60 70 80 Collector current IC (A) Collector current IC (A) IF – VF trr, Irr – IF 100 (A) Peak reverse recovery current Irr (A) Reverse recovery time trr (×10 nS) 150 Forward current IF VCE 5 10 3 100 50 Common cathode : Tj = 25°C : Tj = 125°C 0 0 4 Switching time – IC 10 0.01 0 3 1 2 Forward voltage 3 VF (V) 4 5 5 Irr 3 trr 10 5 3 Common cathode : Tj = 25°C 1 0 : Tj = 125°C 10 20 30 40 Forward current 50 60 70 80 IF (A) 2004-10-01 8/10 MIG75Q7CSB1X OC – Tc ID (H) – fc (A) ID (H) (mA) 200 150 High side control circuit current Over current protection trip level OC Inverter stage 100 Brake stage 50 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 25 20 15 10 5 VD = 15 V 0 0 150 5 (°C) 10 Carrier frequency ID (L) – fc 25 (kHz) 140 OC IC (A) 120 60 Collector current ID (L) (mA) Low side control circuit current fc 20 Reverse bias SOA 80 40 20 100 80 60 40 20 5 10 15 Carrier frequency fc 20 Tj < = 125°C VD = 15V VD = 15 V 0 0 0 0 25 200 (kHz) 400 600 800 Collector-emitter voltage Rth (t) – tw Inverter stage 1000 1200 1400 VCE (V) Rth (t) – tw Brake stage 10 10 TC = 25°C Transient thermal resistance Rth (t)/(°C/W) TC = 25°C Transient thermal resistance Rth (t)/(°C/W) 15 1 Diode stage 0.1 0.01 0.001 Transistor stage 0.01 0.1 Pulse width 1 tw (s) 10 1 Diode stage Transistor stage 0.1 0.01 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 9/10 MIG75Q7CSB1X Turn on loss – IC Turn off loss – IC Eoff (mJ) 100 10 1 0 0 Turn off loss Turn on loss Eon (mJ) 100 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 20 30 40 50 60 Collector current IC (A) 70 80 10 1 0 0 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 20 30 40 50 60 70 80 Collector current IC (A) 2004-10-01 10/10