MITSUBISHI RA03M4547MD-101

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M4547MD
RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA03M4547MD is a 38 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
450 to 470 MHz range.
BLOCK DIAGRAM
2
3
4
1
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>38dBm @ VDD=7.2V, Pin=19dBm
Idq1=30mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.) ,
• ηT>34%
@ VDD=7.2V, Pout=38dBm (Pin adjust.),
Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• IMD3<-25dBc @ VDD=7.2V, Pout (average) =35dBm(Pin adjust.)
Two tone test at 1KHz separation
Idq1=30mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• Broadband Frequency Range: 450-470MHz
• Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
5
6
1 RF Input (Pin)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg1)
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL(Vgg2)
4 Drain Voltage (VDD), Battery
5 RF Output (Pout)
6 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANT
• RA03M4547MD-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA03M4547MD-101
Antistatic tray,
25 modules/tray
RA03M4547MD
MITSUBISHI ELECTRIC
1/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA03M4547MD
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
9.2
V
VDD
Drain Voltage
VGG<3.5V
VGG1
Gate Voltage
VDD<7.2V, Pin=0mW
4
V
VGG2
Gate Voltage
VDD<7.2V, Pin=0mW
4
V
Pin
Input Power
100
mW
Pout
Output Power
f=450-470MHz,
ZG=ZL=50Ω
Tcase(OP)
Tstg
10
W
Operation Case Temperature Range
-30 to +90
°C
Storage Temperature Range
-40 to +110
°C
TYP
MAX
UNIT
470
MHz
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
Frequency Range
Pout
Output Power
ηT
Total Efficiency
nd
2fo
2
ρin
Input VSWR
IGG
Gate Current
Harmonic
rd
IMD3
3 Inter Modulation
Distortion
IMD5
5 Inter Modulation
Distortion
th
GV
—
—
CONDITIONS
MIN
450
VDD=7.2V,Pin(Single Carrier)=+19dBm,
Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
VDD=7.2V,Pout (Single Carrier) =38dBm (,Pin adjust.),
Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
38
dBm
34
%
-25
dBc
4.4:1
—
1
VDD=7.2V,Pout (average)=35dBm(Pin adjust.),
Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.) ,
Two tone test at 1KHz separation
Gain Variation
VDD=7.2V,Pout (Single Carrier)=35dBm(Pin adjust.),
Across specified frequency range
Idq1=30mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
Stability
Vdd=6.0/7.2/9.2V,
Idq1=30mA(Vgg1 adjust),
Idq2=1A(Vgg2 adjust) ,
Po(Single Carrier)=15-38dBm(Pin control)
LOAD VSWR=2:1(All Phase),Zg=50Ω
Load VSWR Tolerance
Vdd=9.2V, Pout(Single Carrier)=39dBm (Pin adjust.),
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=30mA(Vgg1 [email protected]=7.2V),
Idq2=1A(Vgg2 [email protected]=7.2V)
0
mA
-25
dBc
-25
dBc
4
dB
No parasitic oscillation
—
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M4547MD
MITSUBISHI ELECTRIC
2/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M4547MD
RoHS COMPLIANT
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
RA03M4547MD
RA03M4547MD
Effi vs. Po
IMD3,IMD5 vs. Po
T c=+25deg.C, Vdd=7.2V
f=450MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A
T c=+25deg.C, Vdd=7.2V
f=450MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A
0
50
Effi
45
IMD3,IMD5(dBc)
Effi(%),Gp(dB)
40
IMD3(Delta freq=1KHz)
-10
Gp
35
30
25
20
15
IMD5(Delta freq=1KHz)
-20
-30
-40
-50
10
-60
5
-70
0
10
15
20
25
30
35
15
40
20
25
30
35
40
35
40
35
40
Po(2tone ave rage)(dBm)
Po(single carrier)(dBm)
RA03M4547MD
RA03M4547MD
Effi vs. Po
IMD3,IMD5 vs. Po
T c=+25deg.C, Vdd=7.2V
f=460MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A
T c=+25deg.C, Vdd=7.2V
f=460MHz,
Idq 1st stager=30mA
Idq Final Stage=1.0A
0
50
Effi
45
Gp
IMD3(Delta freq=1KHz)
-10
IMD5(Delta freq=1KHz)
IMD3,IMD5(dBc)
Effi(%),Gp(dB)
40
35
30
25
20
15
-20
-30
-40
-50
10
-60
5
-70
0
10
15
20
25
30
35
15
40
20
30
RA03M4547MD
RA03M4547MD
Effi vs. Po
IMD3,IMD5 vs. Po
T c=+25deg.C, Vdd=7.2V
f=470MHz
Idq 1st stager=30mA
Idq Final Stage=1.0A
T c=+25deg.C, Vdd=7.2V
f=470MHz
Idq 1st stager=30mA
Idq Final Stage=1.0A
0
50
Effi
45
IMD3(Delta freq=1KHz)
-10
Gp
40
IMD5(Delta freq=1KHz)
IMD3,IMD5(dBc)
Effi(%),Gp(dB)
25
Po(2tone ave rage)(dBm)
Po(single carrier)(dBm)
35
30
25
20
15
-20
-30
-40
-50
10
-60
5
-70
0
10
15
20
25
30
35
40
15
25
30
Po(2tone ave rage)(dBm)
Po(single carrier)(dBm)
RA03M4547MD
20
MITSUBISHI ELECTRIC
3/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M4547MD
RoHS COMPLIANT
OUTLINE DRAWING (mm)
30±0.2
26.6±0.2
21.2±0.2
⑤
6±0.2
⑥
7.4±0.2
④
6±1
① ② ③
2-R1.5±0.1
10±0.2
(4.4)
6±0.2
(1.7)
φ0.45±0.15
1.5±0.2
(5.4)
2.3±0.4
3.5±0.2
6.1±1
9.9±1
13.7±1
18.8±1
23.9±1
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA03M4547MD
MITSUBISHI ELECTRIC
4/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA03M4547MD
TEST BLOCK DIAGRAM (TWO TONE)
TEST BLOCK DIAGRAM (SINGLE CARRIER)
1 RF Input (Pin)
2 Gate Voltage (VGG1)
3 Gate Voltage (VGG2)
4 Drain Voltage (VDD)
5 RF Output (Pout)
6 RF Ground (Case)
RA03M4547MD
MITSUBISHI ELECTRIC
5/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA03M4547MD
EQUIVALENT CIRCUIT
2
3
4
5
1
6
1 RF Input (Pin)
2 Gate Voltage (VGG1)
3 Gate Voltage (VGG2)
4 Drain Voltage (VDD)
5 RF Output (Pout)
6 RF Ground (Case)
RA03M4547MD
MITSUBISHI ELECTRIC
6/7
31 Jan 2007
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANT
RA03M4547MD
Output Power Adjust.:
Depending on linearity, the following two methods are recommended to adjust. the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module.
b) Is the load impedance ZL=50Ω.
c) Is the source impedance ZG=50Ω.
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
RA03M4547MD
MITSUBISHI ELECTRIC
7/7
31 Jan 2007