MJD128T4G (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Epoxy Meets UL 94 V−0 @ 0.125 in. • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V • This is a Pb−Free Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit VCEO 120 Vdc Collector−Base Voltage VCB 120 Vdc Emitter−Base Voltage VEB 5 Vdc IC 8 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation* @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Collector−Emitter Voltage Collector Current − Continuous Peak °C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range TJ, Tstg −65 to + 150 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient* RqJA 71.4 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 SILICON POWER TRANSISTOR 8 AMPERES 120 VOLTS, 20 WATTS MARKING DIAGRAM 4 Base 1 Collector 2 1 2 3 DPAK CASE 369C STYLE 1 YWW J128G 4 Emitter 3 Y WW J128 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device MJD128T4G Package Shipping † DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJD128/D MJD128T4G (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 120 − Vdc Collector Cutoff Current (VCE = 120 Vdc, IB = 0) ICEO − 5 mA Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc 1000 100 12,000 − − − 2 4 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS hFE DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) − Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) − 4.5 Vdc Base−Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) − 2.8 Vdc Current−Gain−Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) |hfe| 4 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 300 pF (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 300 − − DYNAMIC CHARACTERISTICS Small−Signal Current Gain 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 MJD128T4G (PNP) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 20,000 hFE, DC CURRENT GAIN VCE = 4 V 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 −55 °C 300 200 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 0.2 0.3 0.5 0.7 1 2 3 5 7 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C qVC for VCE(sat) −1 −2 −3 qVB for VBE −55 °C to 25°C 25°C to 150°C −55 °C to 25°C −4 −5 0.1 10 30 +5 0.5 1 2 3 0.2 0.3 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients hfe , SMALL−SIGNAL CURRENT GAIN Figure 4. “On” Voltages IC, COLLECTOR CURRENT μ ( A) 6A Figure 3. Collector Saturation Region 2 105 10,000 REVERSE 104 FORWARD VCE = 30 V 103 102 101 4A Figure 2. DC Current Gain 2.5 0.5 0.1 IC = 2 A IB, BASE CURRENT (mA) TJ = 25°C 1 TJ = 25°C 2.6 IC, COLLECTOR CURRENT (AMP) 3 1.5 3 TJ = 150°C 100°C 100 10−1 +0.6 +0.4 25°C 5000 3000 2000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 PNP NPN 10 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 1 Figure 6. Collector Cut−Off Region 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 Figure 7. Small−Signal Current Gain http://onsemi.com 3 500 1000 MJD128T4G (PNP) 300 TJ = 25°C C, CAPACITANCE (pF) 200 Cob 100 70 Cib 50 30 0.1 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC −30 V RC SCOPE RB 51 D1 ≈ 8 k ≈ 120 +4V 25 ms tf 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% ts 1 t, TIME (s) μ TUT V2 APPROX +8 V 0 V1 APPROX −12 V 3 2 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 td @ VBE(off) = 0 V 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.3 0.2 0.1 0.07 0.05 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 0.1 P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.03 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) Figure 11. Thermal Response http://onsemi.com 4 20 30 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) MJD128T4G (PNP) 20 15 10 500ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 5 3 2 5ms 0.5 0.3 0.2 BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 1ms TJ = 150°C 1 1 2 3 5 7 10 20 30 dc 50 100 120 200 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating REA COLLECTOR BASE ≈8k ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 5 MJD128T4G (PNP) PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D 2 PL G 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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