2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 Gate-to-Source Voltage VGSS ±30 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 12 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 51.4 mJ Avalanche Current *2 IAV 3 Tc=25°C A *1 VDD=50V, L=10mH, IAV=3A *2 L≤10mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ ID=1mA, VGS=0V VDS=320V, VGS=0V VGS= ±30V, VDS=0V 400 VDS=10V, ID=1mA VDS=10V, ID=1.5A 3.0 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on) ID=1.5A, VGS=15V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : K3093 V(BR)DSS Conditions IDSS IGSS max V 1.0 ±100 0.7 Unit 4.0 V 2.3 Ω 1.4 1.8 mA nA S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806QB SY IM TC-00000312 No.8622-1/3 2SK3093LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 360 Output Capacitance 90 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 45 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 10 ns See specified Test Circuit. 28 ns See specified Test Circuit. 17 ns VDS=200V, VGS=10V, ID=3A 10 nC Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.85 1.2 V Note : Be careful in handling the 2SK3093LS because it has no protection diode between gate and source. Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V ≥50Ω ID=1.5A RL=133Ω VOUT VGS=15V D PW=10µs D.C.≤0.5% L DUT 15V 0V 50Ω VDD G P.G RGS 50Ω S 2SK3093LS No.8622-2/3 2SK3093LS ASO IDP=12A Drain Current, ID -- A 10 7 5 <10µs 10 10 µs 0µ ID=3A 3 2 s 1m s 10 10 ms 0m DC s op era tio Operation in this n area is limited by RDS(on). 1.0 7 5 3 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 2.0 1.5 1.0 0.5 0 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 0 20 40 60 Avalanche Energy derating factor -- % 15 10 5 0 100 120 140 160 IT11693 EAS -- Ta 120 20 80 Ambient Temperature, Ta -- °C IT11692 PD -- Tc 25 Allowable Power Dissipation, PD -- W PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 100 80 60 40 20 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11694 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT10478 Note on usage : Since the 2SK3093LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No.8622-3/3