CPH6532 Ordering number : ENA0522 SANYO Semiconductors DATA SHEET CPH6532 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with two NPN transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3216. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 Collector-to-Emitter Voltage VCES 80 V V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 5 V IC 1.0 A Base Current ICP IB 200 Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8m) 1unit 0.9 W Total Power Dissipation PT Mounted on a ceramic board (600mm2✕0.8m) 1.1 W Collector Current Collector Current (Pulse) Junction Temperature Tj Storage Temperature Tstg 2 A mA 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Conditions typ max Unit VCB=40V, IE=0A 0.1 µA VEB=4V, IC=0A 0.1 µA hFE fT VCE=2V, IC=100mA Gain-Bandwidth Product Output Capacitance Cob VCB=10V, f=1MHz Marking : ET Ratings min VCE=10V, IC=300mA 200 560 420 6 MHz pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11007EA TI IM TC-00000428 No. A0522-1/4 CPH6532 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Ratings Conditions min typ max Unit VCE(sat)1 IC=500mA, IB=10mA 130 190 mV VCE(sat)2 IC=300mA, IB=6mA 90 135 mV VBE(sat) IC=500mA, IB=10mA 0.81 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0A 80 V Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO IC=100µA, RBE=0Ω 80 V Collector-to-Emitter Breakdown Voltage IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0A 5 Turm-ON Time Storage Time V ton tstg See specified Test Circuit. 38 ns See specified Test Circuit. 332 ns tf See specified Test Circuit. 40 ns Fall Time Note) The specifications shown above are for each individual transistor. Package Dimensions Electrical Connection unit : mm (typ) 5 4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 0.15 2.9 6 6 5 4 1.6 0.05 1 2 0.95 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 0.4 0.9 0.2 0.6 2.8 0.2 0.6 7018A-006 SANYO : CPH6 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT IC OUTPUT IB2 VR RB RL + 50Ω 100µF VBE= --5V + 470µF VCC=25V 20IB1= --20IB2=IC=500mA No. A0522-2/4 CPH6532 Collector Current, IC -- A 0.7 30 50mA 6mA 0.6 4mA 0.5 2mA 0.4 0.3 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.1 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V 0 0 1.0 0.3 0.4 0.5 0.6 0.7 0.8 Gain-Bandwidth Product, f T -- MHz 3 --25°C 25°C 100 7 5 3 2 1.0 IT11416 f T -- IC VCE=10V 3 Ta=75°C 0.9 Base-to-Emitter Voltage, VBE -- V VCE=2V 2 0.2 5 7 5 0.1 IT11441 hFE -- IC 1000 DC Current Gain, hFE 0.8 Ta= 7 Collector Current, IC -- A 0.8 VCE=2V 0.9 10mA 8mA 5°C 25°C mA 2 0m A 40m A 0.9 IC -- VBE 1.0 --25° C IC -- VCE 1.0 2 1000 7 5 3 2 100 7 5 3 10 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 2 0.01 3 5 7 0.1 2 3 5 7 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 10 7 5 3 VCE(sat) -- IC 3 5 2 1.0 IT01650 f=1MHz 7 Output Capacitance, Cob -- pF 3 Collector Current, IC -- A Cob -- VCB 100 2 IT01648 2 0.1 7 5 C 75° Ta= 3 25 C --25° 2 °C 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 0.01 0.01 5 7 100 IT01652 2 0.1 C 75° Ta= °C --25 C 25° 3 2 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT11420 7 2 0.1 3 5 7 1.0 IT11418 VBE(sat) -- IC IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 5 5 10 IC / IB=50 7 3 Collector Current, IC -- A VCE(sat) -- IC 5 2 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT01658 No. A0522-3/4 CPH6532 ASO 5 3 ICP=2A 1m s DC 10 0m er 2 ms op s 10 3 Collector Dissipation, PC -- W 1.0 7 5 ati on 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 Mounted on a ceramic board (600mm2✕0.8mm) 1.2 IC=1A µs s 100 0µ 50 Collector Current, IC -- A 2 PC -- Ta 1.4 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 1.1 1.0 0.9 To ta 0.8 ld 1u nit 0.6 iss ipa tio n 0.4 0.2 0 3 5 7 IT11541 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10764 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0522-4/4