SANYO SB20015M

SB20015M
Ordering number : ENA0198
SANYO Semiconductors
DATA SHEET
SB20015M
Low IR Schottky Barrier Diode
15V, 2.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Symbol
Conditions
Ratings
VRRM
VRSM
Average Output Current
IO
Surge Forward Current
IFSM
Unit
15
V
17
V
Mounted on a ceramic board (500mm2✕0.8mm)
2.0
A
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
VR
Forward Voltage
VF
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
Thermal Resistance
Rth(j-a)
Ratings
Conditions
min
IR=0.2mA
IF=2.0A
typ
Unit
max
15
V
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
27
Mounted on a ceramic board (500mm2✕0.8mm)
70
0.55
V
6
µA
pF
10
ns
°C / W
Marking : SN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002129 No. A0198-1/3
SB20015M
Package Dimensions
unit : mm
7019A-001
Electrical Connection
3
0.15
0.25
2.0
1 : Anode
2 : No Contact
3 : Cathode
0 to 0.02
1.6
2.1
3
Top view
0.25
1
0.65
2
1
2
0.85
0.3
0.07
1 : Anode
2 : No Contact
3 : Cathode
SANYO : MCPH3
trr Test Circuit
50Ω
100Ω
10Ω
10µs
10mA
100mA 100mA
Duty≤10%
--5V
trr
IF -- VF
10
7
5
Reverse Current, IR -- µA
2
1.0
7
5
3
2
0.1
7
5
25°
100 C
°C
75°C
50°
C
25°C
0°C
--25°C
Forward Current, IF -- A
Ta=125°C
1000
3
2
100°C
100
75°C
10
50°C
1.0
25°C
0.1
0°C
0.01
Ta=
1
3
--25°C
0.001
0.01
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
1.6
PF(AV) -- IO
(1)
(2) (4) (3)
θ
1.2
1.0
0.8
360°
Sine wave
180°
360°
0.6
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.4
0.2
0
0
0.5
1.0
1.5
2
4
6
2.0
Average Output Current, IO -- A
2.5
IT10432
8
10
12
14
Reverse Voltage, VR -- V
IT10276
Rectangular
wave
1.4
0
0.7
Average Reverse Power Dissipation, PR(AV) -- mW
0
Average Forward Power Dissipation, PF(AV) -- W
IR -- VR
10000
0.025
0.020
16
IT10277
PR(AV) -- VRM
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
(1)
VR
0.015
(2)
θ
360°
(3)
Sine wave
0.010
VR
180°
(4)
360°
0.005
0
0
2
4
6
8
10
12
14
Peak Reverse Voltage, VRM -- V
16
IT10433
No. A0198-2/3
SB20015M
Tc -- IO
140
100
Interterminal Capacitance, C -- pF
Case Temperature, Tc -- °C
120
*Mounted on a ceramic
board (500mm2✕0.8mm),
Rth(j-a)=68°C/W
80
60
Rectangular
wave
40
(4)
θ
360°
(1)
(3)
(2)
Sine
wave
20
C -- VR
5
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
3
2
100
7
5
3
2
180°
360°
0
0
0.5
1.0
1.5
2.0
Average Output Current, IO -- A
IT10434
IFSM -- t
14
Surge Forward Current, IFSM(Peak) -- A
2.5
10
0.1
2
3
5
7
1.0
2
3
5
7
10
Reverse Voltage, VR -- V
2
3
IT10275
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0198-3/3