SKM 400GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
1 /( 0
%
1 3(+ 0
/(0" '
3)++
45+
&
6+ 0
53+
&
#++
&
: /+
3+
>
/( 0
44+
&
6+ 0
5++
&
#++
&
1 3(+ 0
//++
&
/( 0
44+
&
6+ 0
5++
&
#++
&
//++
&
(++
&
1
* 4+ --- @ 3(+
0
* 4+ --- @ 3/(
0
4+++
%78/$%
9
Trench IGBT Modules
3/++ ; 9 < /+ ; 1 3/( 0
= 3)++ Inverse Diode
%?
1 3(+ 0
%?78
%?78/$%?
SKM 400GB176D
%?8
3+ ; -
SKM 400GAL176D
Freewheeling Diode
%?
1 3(+ 0
%?78
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3+ ; -
Preliminary Data
Features
!" # $ %
Typical Applications
& '
()( * )(+ &
,! $ -
.
' 1 3(+ 0
Module
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&" 3 -
Characteristics
Symbol Conditions
IGBT
9
9 " % 3/ &
%
9 + " +
9 3( /(0" '
1 /( 0
'
' 79 4 B
71*
1
%9F
Units
("/
("6
#"4
+"3(
+"4(
&
3
3"/
3"3
1 /(0
5"5
4"/
B
1 3/(0
("/
#
B
/
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3 8C
9 *6---@3(
79
4 B
max.
+"A
D9
typ.
1 3/( 0
%
5++ &" 9 3( 1 /(0-
/(" 9 + min.
1 /( 0
1 3/(0-
GB
Units
/( 0
%78
SEMITRANS® 3
Values
3/++
%
5++&
1 3/( 0
9 : 3(
3A"6
3"3
?
?
+"66
?
/(++
55+
((
3)+
66+
34(
E
336
E
+"+)(
GH.
GAL
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Characteristics
Symbol Conditions
Inverse Diode
? %?
5++ &; 9 + ?+
?
®
SEMITRANS 3
Trench IGBT Modules
%778
D
%?
5++ &
'H' (6++ &H>
9 *3( ; 3/++ 71*I
''
min.
typ.
max.
Units
1 /( 0-
3")
3"A
1 3/( 0-
3"6
/
1 /( 0
3"/
3"4
1 3/( 0
+"A
3"3
1 /( 0
3")
3")
B
1 3/( 0
5
5
B
1 3/( 0
436
33)
&
>
)6
E
+"3/(
GH.
FWD
SKM 400GB176D
? SKM 400GAL176D
?+
Preliminary Data
?
Features
!" # $ %
Typical Applications
& '
()( * )(+ &
,! $ -
.
' %?
5++ &; 9 + %778
D
%?
5++ &
'H' (6++ &H>
9 *3( ; 3/++ 71*?I
''
1 /( 0-
3")
3"A
1 3/( 0-
3"6
/
1 /( 0
3"/
3"4
1 3/( 0
+"A
3"3
1 /( 0
3")
3")
1 3/( 0
5
5
1 3/( 0
436
33)
&
>
)6
E
+"3/(
GH.
Module
J
7K@K
3(
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7*
'
8
L 8#
8
8#
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/( 0
+"5(
B
3/( 0
+"(
B
+"+56
GH.
5
(
M
/"(
(
M
5/(
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
7
7
7
7
3
/
5
4
3
/
5
(/
36
4"#
+"4
+"+(#A
+"+3//
+"++/
LH.
LH.
LH.
LH.
4
+"+/
7
7
7
7
3
/
5
4
3
/
5
6(
/6
3+"(
3"(
+"+(4
+"++)(
+"++36
LH.
LH.
LH.
LH.
4
+"+++/
Zth(j-c)D
Trench IGBT Modules
SKM 400GB176D
SKM 400GAL176D
Preliminary Data
Features
!" # $ %
Typical Applications
& '
()( * )(+ &
,! $ -
.
' GB
3
GAL
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
I (#
9F
6
I(#
9&J
28-09-2007 ARW
I()
© by SEMIKRON