BUL742A ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL742A is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0, I B ≤ 2 A, t p < 10µs, T j < 150 o C) IC I CM IB Value Unit 950 V 400 V V (BR)EBO V Collector Current 4 A Collector Peak Current (t p <5 ms) 8 A Base Current 2 A I BM Base Peak Current (t p <5 ms) 4 A P tot Total Dissipation at Tc = 25 o C 70 W T stg Storage Temperature Tj Max. Operating Junction Temperature October 2003 -65 to 150 o C 150 o C 1/5 BUL742A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 950 V 100 µA I CEO Collector Cut-off Current (I B = 0) V CE = 400 V 250 µA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 10 mA V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 1 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A I C = 3.5 A V BE(sat) ∗ Base-Emitter Saturation Voltage L = 25 mH Typ. 400 V 24 V I B = 0.2 A IB = 1 A 0.5 1.5 V V I C = 3.5 A IB = 1 A 1.5 V DC Current Gain I C = 800 mA I C = 10 mA VCE = 3 V V CE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 250 V I B1 = 0.5 A t p = 30 µs I C = 2.5 A I B2 = -1 A (see figure 2) E sb Avalanche Energy L = 2 mH (see figure 1) h FE ∗ 12 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/5 Min. Derating Curve 16 10 40 0.9 100 6 µs ns mJ BUL742A Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit 3/5 BUL742A TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 4/5 BUL742A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5