L6571A L6571B HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VERY LOW START UP CURRENT: 150µA UNDER VOLTAGE LOCKOUT WITH HYSTERESIS PROGRAMMABLE OSCILLATOR FREQUENCY DEAD TIME 1.25µs (L6571A) or 0.72µs (L6571B) dV/dt IMMUNITY UP TO ±50V/ns ESD PROTECTION Minidip SO8 ORDERING NUMBERS: L6571A L6571AD L6571B L6571BD tor. The internal circuitry of the device allows it to be driven also by external logic signal. DESCRIPTION The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross-conduction of the power devices. The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capaci- Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25µs and 0.72µs (typ.) ■ BLOCK DIAGRAM H.V. RHV CVS VS BOOT 1 8 BIAS REGULATOR 7 LEVEL SHIFTER 2 BUFFER 6 RF CF 3 CBOOT HIGH SIDE DRIVER VS RF HVG OUT LOAD COMP VS CF COMP GND 4 LOGIC LOW SIDE DRIVER LVG 5 D96IN433 September 2000 1/8 L6571A L6571B ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IS (*) Supply Current 25 mA VCF Oscillator Resistor Voltage 18 V VLVG Low Side Switch Gate Output 14.6 V VOUT High Side Switch Source Output -1 to VBOOT - 18 V VHVG High Side Switch Gate Output -1 to VBOOT V VBOOT Floating Supply Voltage 618 V VBOOT/OUT Floating Supply vs OUT Voltage 18 V dVBOOT/dt VBOOT Slew Rate (Repetitive) ± 50 V/ns dVOUT/dt VOUT Slew Rate (Repetitive) ± 50 V/ns Tstg Storage Temperature -40 to 150 °C Tj Junction Temperature -40 to 150 °C Ambient Temperature (Operative) -40 to 125 °C Tamb (*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA Symbol Rth j-amb Parameter Minidip SO8 Unit 100 150 °C/W Min. Max. Unit 10 VCL V Floating Supply Voltage - 500 V High Side Switch Source Output -1 VBOOT -VCL V 200 kHz Thermal Resistance Junction-Ambient Max RECOMMENDED OPERATING CONDITIONS Symbol VS VBOOT VOUT fout Parameter Supply Voltage Oscillation Frequency PIN CONNECTION VS 1 8 BOOT RF 2 7 HVG CF 3 6 OUT GND 4 5 LVG D94IN059 2/8 L6571A L6571B PIN FUNCTION N° Pin Description 1 VS Supply input voltage with internal clamp [typ. 15.6V] 2 RF Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to drive a full H-bridge) 3 CF Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC. 4 GND Ground 5 LVG Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. 6 OUT Upper driver floating reference 7 HVG High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. 8 BOOT Bootstrap voltage supply. It is the upper driver floating supply. ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.) Symbol Pin VSUVP 1 Parameter Test Condition Min. Typ. Max. Unit VS Turn On Threshold 8.3 9 9.7 V VSUVN VS Turn Off Threshold 7.3 8 8.7 V VSUVH VS Hysteresis 0.7 1 1.3 V 14.6 15.6 16.6 V VCL VS Clamping Voltage IS = 5mA ISU Start Up Current VS < VSUVN 150 250 µA Quiescent Current VS > VSUVP 500 700 µA Iq IBOOTLK 8 Leakage Current BOOT pin vs GND VBOOT = 580V 5 µA IOUTLK 6 Leakage Current OUT pin vs GND VOUT = 562V 5 µA IHVG SO 7 High Side Driver Source Current VHVG = 6V 110 175 mA High Side Driver Sink Current VHVG = 6V 190 275 mA Low Side Driver Source Current VLVG = 6V 110 175 mA Low Side Driver Sink Current VLVG = 6V 190 275 mA RF High Level Output Voltage IRF = 1mA VS -0.05 RF Low Level Output Voltage IRF = -1mA IHVG SI ILVG SO 5 ILVG SI VRFON 2 VRF OFF VCFU VCFL td 3 V 200 mV CF Upper Threshold 7.7 8 8.2 V CF Lower Threshold 3.80 4 4.3 V 0.85 0.50 1.25 0.72 1.65 0.94 µs µs Internal Dead Time L6571A L6571B 50 VS -0.2 3/8 L6571A L6571B ELECTRICAL CHARACTERISTCS (continued) Symbol Pin DC Parameter Test Condition Duty Cycle, Ratio Between Dead Time + Conduction Time of High Side and Low Side Drivers IAVE 1 Average Current from Vs No Load, fs = 60KHz fout 6 Oscillation Frequency RT = 12K; CT = 1nF Min. Typ. Max. 0.45 0.5 0.55 1.2 1.5 mA 60 63 kHz 57 Unit OSCILLATOR FREQUENCY The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation: 1 1 f O SC = ----------------------------------------- = -----------------------------------------1.3863 ⋅ R F ⋅ C F 2 ⋅ R F ⋅ C F ⋅ In2 Where RF and CF are the external resistor and capacitor. The device can be driven in "shut down" condition keeping the CF pin close to GND, but some cares have to be taken: 1. When CF is to GND the high side driver is off and the low side is on 2. The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to limit the current discharge with a resistive path imposing R · CF >1µs (see fig.1) Figure 1. 8 2 7 3 6 4 5 RF R fault signal 1 CF GNDM Figure 2. Waveforms VS VSUVP VCF LVG T1 4/8 D96IN434 TC L6571A L6571B Figure 3. Typical Dead Time vs. Temperature Dependency (L6571A) Dead time [µsec] 1.7 D96IN378A 1.6 Figure 6. Typical Rise and Fall Times vs. Load Capacitance time [nsec] 300 D96IN417 250 Tr 1.5 200 1.4 150 1.3 Tf 100 1.2 1.1 50 1 0 0.9 -50 0 50 100 Temperature [C] 150 Figure 4. Typical Frequency vs Temperature Dependency Frequency [KHz] 65 D96IN379A 64 0 1 2 3 4 5 6 C [nF] For both high and low side buffers @25˚C Tamb Figure 7. Quiescent Current vs. Supply Voltage. Iq (µA) D96IN418 104 63 62 61 103 60 59 102 58 57 56 10 55 -50 -25 0 25 50 75 Temperature [C] 100 125 0 2 4 6 8 10 12 14 VS(V) Figure 5. Typical and Theoretical Oscillator Frequency vs Resistor Value f (KHz) 150 D96IN380 Theoretical 100 90 80 70 C=330pF C=560pF C=1nF 60 50 30 20 5 6 7 8 9 10 15 20 30 Resistor Value (Kohm) 40 50 5/8 L6571A L6571B mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.25 a2 MAX. 0.069 0.004 0.010 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.020 c1 45° (typ.) D (1) 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F (1) 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M S 0.6 0.024 8 ° (max.) (1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch). 6/8 OUTLINE AND MECHANICAL DATA SO8 L6571A L6571B mm DIM. MIN. A TYP. inch MAX. MIN. 3.32 TYP. MAX. 0.131 a1 0.51 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 0.020 D E 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L Z 3.18 OUTLINE AND MECHANICAL DATA 3.81 1.52 0.125 0.150 Minidip 0.060 7/8 L6571A L6571B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8