STC03DE170HP Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.55 W Preliminary Data General features Table 1. General features VCS(ON) IC RCS(ON) 1V 1.8A 0.55Ω ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ In compliance with the 2002/93/EC European Directive TO247-4L HP Description Internal schematic diagrams The STC03DE170HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HP is designed for use in aux flyback smps for any three phase application. Applications ■ Aux SMPS for three phase mains Order codes Part Number Marking Package Packing STC03DE170HP C03DE170HP TO247-4L HP Tube September 2006 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 STC03DE170HP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STC03DE170HP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 1700 V VCS(SS) Collector-source voltage (V BS =VGS =0V) VBS(OS) Base-source voltage (IC =0, VGS =0V) 30 V VSB(OS) Source-base voltage (IC =0, VGS =0V) 9 V ± 20 V Collector current 3 A Collector peak current (tP < 5ms) 6 A Base current 2 A IBM Base peak current (tP < 1ms) 4 A Ptot Total dissipation at T c ≤ 25°C 35.7 W Tstg Storage temperature -40 to 150 °C 125 °C Value Unit 2.8 °C/W VGS IC ICM IB TJ Table 3. Symbol Rthj-case Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max 3/11 Electrical characteristics 2 STC03DE170HP Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current VCS(SS) =1700V (VBS =V GS =0V) 100 µA IBS(OS) Base-source current (IC =0, VGS =0V) VBS(OS) =30V 10 µA ISB(OS) Source-base current (IC =0, VGS =0V) VSB(OS) =9V 100 µA IGS(OS) Gate-source leakage (VBS =0V) VGS = ± 20V 500 nA VCS(ON) Collector-source ON voltage 1.5 1.3 V V 1 0.8 1.2 1 V V 2.2 3 V VGS =10V IC =1.8A IB =0.36A VCS =1V VGS =10V IC =1.8A 3.5 5 VCS =1V V GS =10V IC =0.7A 6 10 DC current gain VBS(ON) Base-source ON voltage VGS =10V IC =1.8A IB =0.36A VGS =10V IC =0.7A IB =70mA VGS(th) Gate threshold voltage VBS =V GS IB =250µA VCS =25V f =1MHz QGS(tot) ts tf ts tf VCS(dyn) Input capacitance Gate-source Charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Collector-source dynamic voltage (500ns) 1 1 VGS =10V IC =0.7A IB =70mA hFE Ciss 4/11 Electrical characteristics VGS=0V VCS=15V VGS=10V VCB=0V IC =1.8A VGS =10V RG =47Ω VClamp =1200V tp =4µs IC =1.8A IB =0.36A VGS =10V RG =47Ω VClamp =1200V tp =4µs IC =0.7A IB =70mA 1.5 750 pF 12.5 nC 760 ns 14 ns 690 ns 32 ns 3.9 V VCC =VClamp =400V VGS =10V IC =0.5A IB = 0.1A R G =47Ω tpeak =500ns IBpeak =1A STC03DE170HP Table 4. Symbol VCS(dyn) VCSW Electrical characteristics Electrical characteristics Parameter Collector-source dynamic voltage (1µs) Test Conditions Min. Typ. Max. Unit VCC =VClamp =400V VGS =10V IC =0.5A IB = 0.1A R G =47Ω tpeak =500ns IBpeak =1A Maximum collectorsource voltage switched RG =47Ω without snubber hFE =5 IC = 3A 2.2 1700 V V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Dynamic collector-source saturation voltage Figure 3. Reverse biased safe operating area Figure 4. Gate threshold voltage vs temperature 5/11 Electrical characteristics 6/11 STC03DE170HP Figure 5. DC current gain Figure 6. DC current gain Figure 7. Collector-source On voltage Figure 8. Collector-source On voltage Figure 9. Base-source On voltage Figure 10. Base-source On voltage STC03DE170HP Electrical characteristics Figure 11. Inductive load switching time Figure 12. Inductive load switching time 7/11 Package mechanical data 3 STC03DE170HP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STC03DE170HP Package mechanical data TO247-4LHP MECHANICAL DATA DIM. A A1 A2 A3 b b1 b2 c D D1 E e e1 L L1 L2 L3 øP S MIN. 5.50 2.85 0.95 1.10 2.50 0.40 23.85 15.45 2.54 mm. TYP 5.65 3.15 1.92 3.18 1.10 24 21.50 15.60 MAX. 5.80 3.25 1.30 1.50 2.90 0.80 24.15 15.75 5.08 10.20 2.20 2.50 18.50 3 3.55 10.80 2.80 3.65 5.50 7908765A 9/11 Revision history 4 STC03DE170HP Revision history 26 Table 5. 10/11 Revision history Date Revision 26-Sep-2006 1 Changes First release. STC03DE170HP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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