STE07DE220 Hybrid emitter switched bipolar transistor ESBT® 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. VCS(ON) IC RCS(ON) 0.5V 7A 0.07 Ω ■ High voltage / high current cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Ultra low CISS ■ Low dynamic VCS(ON) Applications ■ Industrial converters ■ Welding ISOTOP Figure 1. Internal schematic diagrams Description The STE07DE220 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE07DE220 is designed for use in industrial mains flyback converters and/or special applications. Table 2. Device summary Order code Marking Package Packaging STE07DE220 E07DE220 ISOTOP Tube May 2008 Rev 1 This is preliminary information on a new product in developement or undergoing evaluation. Detail are subject to change without notice. 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 2200 V VCS(SS) Collector-source voltage (V BS =VGS = 0) VBS(OS) Base-source voltage (IC =0, VGS = 0) 40 V VSB(OS) Source-base voltage (IC =0, VGS = 0) 10 V ± 20 V Collector current 7 A Collector peak current (tP < 5 ms) 14 A Base current 7 A IBM Base peak current (tP < 1 ms) 14 A Ptot Total dissipation at Tc ≤25 °C 220 W Tstg Storage temperature -40 to 150 °C Max. operating junction temperature 125 °C Insulation withstand voltage (AC-RMS) from all four leads to external heatsink 2500 V Value Unit 0.45 °C/W VGS IC ICM IB TJ VISO Table 3. Symbol Rthj-case 2/7 STE07DE220 Gate-source voltage Thermal data Parameter Thermal resistance junction-case max STE07DE220 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICS(SS) Collector-source VCS = 2200 V current (V BS =VGS = 0) 100 µA IBS(OS) Base-source current (IC =0, VGS = 0) VBS = 40 V 10 µA ISB(OS) Source-base current (IC =0, VGS = 0) VSB = 9 V 100 µA IGS(OS) Gate-source leakage (V BS = 0) VGS = ± 20 V 500 nA VCS(ON) Collector-source ON voltage VGS = 10 V VCS = 1 V IC = 3.5 A 15 Base-source ON voltage VGS = 10 V IC = 7 A 1 0.8 Gate threshold voltage VBS = VGS Input capacitance (VGS = VCB = 0) VCS = 25 V f = 1 MHz VBS(ON) VGS(th) ts tf ts tf 0.5 0.4 9 DC current gain QGS(tot) IB = 1.4 A VGS = 10 V IC = 3.5 A IB = 0.35 A VGS = 10 V VCS = 1 V IC = 7 A hFE Ciss VGS = 10 V IC = 7 A Gate-source charge (V CB = 0) Inductive load Storage time Fall time Inductive load Storage time Fall time IB = 1.4 A VGS = 10 V IC = 3.5 A IB = 0.35 A IB = 250 µA VCS = 25 V VGS = 10 V IC = 7 A 3 3.7 V V V V 4.5 V t.b.d. pF t.b.d. nC VGS = 10 V RG = 47 Ω VClamp = 1760 V tp = 4 µs t.b.d. ns IC = 3.5 A IB = 0.7 A t.b.d. ns VGS = 10 V RG = 47 Ω VClamp = 1760 V tp = 4 µs t.b.d. ns IC = 3 .5 A IB = 0.35 A t.b.d. ns 3/7 Package mechanical data 3 STE07DE220 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 4/7 STE07DE220 Package mechanical data ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 G1 12.6 12.8 0.496 0.594 0.503 G2 3.5 4.3 0.137 1.169 F 4.1 4.3 0.161 0.169 F1 4.6 5 0.181 0.196 P 4 4.3 0.157 0.169 P1 4 4.4 0.157 0.173 S 30.1 30.3 1.185 1.193 P093A 5/7 Revision history 4 STE07DE220 Revision history 26 Table 5. 6/7 Document revision history Date Revision 20-May-2008 1 Changes First release. STE07DE220 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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