STD616A ® HIGH VOLTAGE NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION APPLICATIONS: SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. 3 3 2 1 1 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1000 V V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 12 V Collector Current 1.6 A Collector Peak Current (t p < 5 ms) 2.4 A Base Current 0.8 A IC I CM IB I BM Base Peak Current (t p < 5 ms) 1.2 A P tot Total Dissipation at T c = 25 o C 20 W T stg Storage Temperature Tj June 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 STD616A THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0 V) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions V CE = 1000 V V CE = 1000 V I C = 100 mA Min. T j = 125 o C L = 25 mH Typ. Max. Unit 50 0.5 µA mA 450 V 12 V Emitter-Base Voltage (I C = 0) I E = 1 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 0.3 0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 1 1.2 V V DC Current Gain IC IC IC IC t on ts tf RESISTIVE LOAD Turn On Time Storage Time Fall Time V CC = 250 V I B1 = 65 mA I C = 250 mA I B2 = -130 mA 0.2 5 0.65 µs µs µs t on ts tf RESISTIVE LOAD Turn On Time Storage Time Fall Time V CC = 250 V I B1 = 160 mA I C = 0.8 A I B2 = -0.4 A 1 2.5 0.35 µs µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time V cl = 300 V I B1 = 65 mA L = 200 µH I C = 250 mA I B2 = -130 mA 5 0.5 µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time V cl = 300 V I B1 = 160 mA L = 200 µH I C = 0.8 A I B2 = -0.4 A 2.5 0.25 µs µs V EBO h FE ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 = = = = 200 µA 300 mA 480 mA 1.6 A V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V 17 25 12 4 STD616A Safe Operating Area Derating Curve Reverse Biased SOA 3/6 STD616A TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 B3 B5 0.033 0.30 B6 C 0.213 0.85 0.012 0.95 0.037 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 0.80 V1 10o 1.00 0.047 0.031 0.039 10o P032N_E 4/6 STD616A TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 5/6 STD616A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6