STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET Features Type VDSS RDS(on) Max ID Pw STD16NF25 250V <0.235Ω 13A 90W STF16NF25 250V <0.235Ω 13A(1) 25W STP16NF25 250V <0.235Ω 13A 90W 3 1 3 1 2 DPAK TO-220 1. Limited only by maximum temperature allowed ■ Exceptional dv/dt capability 3 1 ■ 100% avalanche tested ■ Application oriented characterization 2 TO-220FP Application ■ Figure 1. Switching applications Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order codes Marking Package Packaging STD16NF25 16NF25 DPAK Tape & reel STF16NF25 16NF25 TO-220FP Tube STP16NF25 16NF25 TO-220 Tube October 2007 Rev 2 1/16 www.st.com 16 Contents STD16NF25 - STF16NF25 - STP16NF25 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 9 STD16NF25 - STF16NF25 - STP16NF25 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP TO-220 VDS Drain-source voltage (VGS = 0) 250 VGS Gate- source voltage ± 20 ID Drain current (continuous) at TC = 25°C IDM(2) Ptot dv/dt 13 A A Drain current (pulsed) 52 52(1) A Total dissipation at TC = 25°C 90 25 W 0.72 0.2 W/°C Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Tstg Storage temperature Tj 13 8.19 Derating Factor (3) V (1) 8.19(1) Drain current (continuous) at TC = 100°C ID V 15 -- V/ns 2500 -55 to 150 V °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area. 3. ISD ≤ 13A, di/dt ≤ 300A/µs, VDD ≤ 80% V(BR)DSS, Tj ≤ TJMAX Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction to pcb max Rthj-amb Thermal resistance junction-ambient max TJ Maximum lead temperature for soldering purpose Table 4. Symbol DPAK TO-220FP 1.39 5 °C/W -- 50 -- °C/W 62.5 100 62.5 °C/W 300 °C Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 13 A EAS Single pulse avalanche energy (starting Tj=25°C, Id= 13A, Vdd=50V) 100 mJ 3/16 Electrical characteristics 2 STD16NF25 - STF16NF25 - STP16NF25 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 6.5A Table 6. Symbol Test conditions Min. Typ. Max. 250 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.195 0.235 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V, ID = 6.5A 10 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 680 125 20 pF pF pF Equivalent output capacitance VDS = 0V to 200V, VGS = 0 48 pF Intrinsic gate resistance f=1MHz, open drain 2.1 Ω td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 125V, ID = 6.5A RG = 4.7Ω VGS = 10V (see Figure 18) 9 17 35 17 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 200V, ID = 6.5A, VGS = 10V (see Figure 19) 18 3 8 nC nC nC Coss eq.(2) RG 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/16 STD16NF25 - STF16NF25 - STP16NF25 Table 7. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Min. Typ. ISD = 13A, VGS = 0 Max. Unit 13 52 A A 1.6 V ISD = 13A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 60V Reverse recovery current (see Figure 20) 133 651 10 ns µC A ISD = 13A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 60V, Tj = 150°C Reverse recovery current (see Figure 20) 157 895 11 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/16 Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK Figure 7. Thermal impedance for DPAK 6/16 STD16NF25 - STF16NF25 - STP16NF25 Figure 8. Output characteristics Figure 10. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static-drain source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/16 Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs starting Tj 8/16 STD16NF25 - STF16NF25 - STP16NF25 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/16 Package mechanical data 4 STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/16 Package mechanical data STD16NF25 - STF16NF25 - STP16NF25 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 13/16 Packaging mechanical data 5 STD16NF25 - STF16NF25 - STP16NF25 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 14/16 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD16NF25 - STF16NF25 - STP16NF25 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 12-Oct-2007 1 Initial release 16-Oct-2007 2 Modified: Figure 13: Capacitance variations 15/16 STD16NF25 - STF16NF25 - STP16NF25 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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