STMICROELECTRONICS STU10NM65N

STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
RDS(on)
max
VDSS
(@Tjmax)
Type
ID
3
2
STD10NM65N
710 V
< 0.48 Ω
9A
STF10NM65N
710 V
< 0.48 Ω
9 A(1)
STP10NM65N
710 V
< 0.48 Ω
9A
STU10NM65N
710 V
< 0.48 Ω
9A
1
3
1
2
IPAK
TO-220
3
1. Limited only by maximum temperature allowed
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
Application
■
1
2
TO-220FP
Figure 1.
DPAK
Internal schematic diagram
Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD10NM65N
10NM65N
DPAK
Tape & reel
STF10NM65N
10NM65N
TO-220FP
Tube
STP10NM65N
10NM65N
TO-220
Tube
STU10NM65N
10NM65N
IPAK
Tube
February 2008
Rev 2
1/17
www.st.com
17
Contents
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/17
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220/IPAK
DPAK
Unit
TO-220FP
VDS
Drain-source voltage (VGS = 0)
650
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
9
9(1)
A
ID
Drain current (continuous) at TC = 100 °C
5.7
5.7(1)
A
IDM (2)
Drain current (pulsed)
36
36(1)
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
dv/dt (3)
Peak diode recovery voltage slope
15
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
V/ns
--
2500
V
-55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 9 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case
max
Rthj-pcb
Thermal resistance junction-pcb max
Rthj-amb
Thermal resistance junction-amb
max
Tl
Table 4.
Symbol
TO-220
IPAK
DPAK
TO-220FP
Unit
5
°C/W
1.38
--
--
50
--
°C/W
62.5
100
--
62.5
°C/W
Maximum lead temperature for
soldering purpose
300
°C
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD= 50 V)
300
mJ
3/17
Electrical characteristics
2
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
dv/dt (1)
Drain source voltage slope
VDD= 520 V, ID= 9 A,
VGS= 10 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 4.5 A
0.43
0.48
Ω
Typ.
Max.
Unit
650
V
25
2
V/ns
1. Characteristics value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward transconductance
VDS=15 V, ID = 4.5 A
7.5
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
850
53
4
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
90
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V,
(see Figure 19)
25
14
4
nC
nC
nC
Coss eq.(2)
Qg
Qgs
Qgd
S
pF
pF
pF
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min
Typ
Max
12
8
50
20
VDD = 325 V, ID = 4.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Unit
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Min
Typ
Source-drain current
Source-drain current (pulsed)
Max
Unit
9
36
A
A
1.3
V
Forward on voltage
ISD = 9 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
330
3
19
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
430
4
19
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/17
Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for DPAK/IPAK Figure 7.
6/17
Thermal impedance for DPAK/IPAK
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Figure 8.
Output characteristics
Figure 10. Transconductance
Figure 9.
Electrical characteristics
Transfer characteristics
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations
7/17
Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
8/17
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/17
Package mechanical data
4
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/17
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/17
Package mechanical data
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
12/17
L5
1 2 3
L4
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
5.20
5.40
b2
b4
0.95
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
e
e1
6.60
2.28
4.40
H
4.60
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
13/17
Package mechanical data
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
14/17
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
5
Package mechanical data
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
MIN.
12.1
0.476
1.6
0.059 0.063
1.5
D1
1.5
E
1.65
1.85
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
15.7
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
D
W
inch
MAX.
0.059
0.065 0.073
1.574
16.3
0.618
0.641
15/17
Revision history
6
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Revision history
Table 9.
16/17
Document revision history
Date
Revision
Changes
26-Oct-2007
1
Initial release.
07-Feb-2008
2
Document status promoted from preliminary data to datasheet.
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
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17/17