STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features RDS(on) max VDSS (@Tjmax) Type ID 3 2 STD10NM65N 710 V < 0.48 Ω 9A STF10NM65N 710 V < 0.48 Ω 9 A(1) STP10NM65N 710 V < 0.48 Ω 9A STU10NM65N 710 V < 0.48 Ω 9A 1 3 1 2 IPAK TO-220 3 1. Limited only by maximum temperature allowed 3 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 Application ■ 1 2 TO-220FP Figure 1. DPAK Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STD10NM65N 10NM65N DPAK Tape & reel STF10NM65N 10NM65N TO-220FP Tube STP10NM65N 10NM65N TO-220 Tube STU10NM65N 10NM65N IPAK Tube October 2008 Rev 3 1/17 www.st.com 17 Contents STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/IPAK TO-220FP DPAK Unit VDS Drain-source voltage (VGS = 0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 9 9(1) A ID Drain current (continuous) at TC = 100 °C 5.7 5.7(1) A IDM (2) Drain current (pulsed) 36 36(1) A PTOT Total dissipation at TC = 25 °C 90 25 W dv/dt (3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) Tstg Storage temperature Tj V/ns -- 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 9 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-amb max Tl Table 4. Symbol TO-220 IPAK DPAK TO-220FP Unit 5 °C/W 1.38 -- -- 50 -- °C/W 62.5 100 -- 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Avalanche characteristics Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD= 50 V) 200 mJ 3/17 Electrical characteristics 2 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD= 520 V, ID= 9 A, VGS= 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 4.5 A 0.43 0.48 Ω Typ. Max. Unit 650 V 25 2 V/ns 1. Characteristics value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS=15 V, ID = 4.5 A 7.5 Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 850 53 4 Equivalent output capacitance VGS = 0, VDS = 0 to 520 V 90 pF Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 9 A, VGS = 10 V, (see Figure 19) 25 14 4 nC nC nC Coss eq.(2) Qg Qgs Qgd S pF pF pF 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min Typ Max 12 8 50 20 VDD = 325 V, ID = 4.5 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ Source-drain current Source-drain current (pulsed) Max Unit 9 36 A A 1.3 V Forward on voltage ISD = 9 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 330 3 19 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) 430 4 19 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/17 Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK/IPAK Figure 7. 6/17 Thermal impedance for DPAK/IPAK STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations 7/17 Electrical characteristics STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/17 Package mechanical data 4 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/17 Package mechanical data STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-220FP MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/17 L5 1 2 3 L4 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 5.20 5.40 b2 b4 0.95 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 13/17 Package mechanical data STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 14/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 5 Package mechanical data Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 MIN. 12.1 0.476 1.6 0.059 0.063 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 15.7 MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. D W inch MAX. 0.059 0.065 0.073 1.574 16.3 0.618 0.641 15/17 Revision history 6 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Revision history Table 9. 16/17 Document revision history Date Revision Changes 26-Oct-2007 1 Initial release. 07-Feb-2008 2 Document status promoted from preliminary data to datasheet. 14-Oct-2008 3 Table 4: Avalanche characteristics has been corrected. STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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