STTH8003CY ® HIGH FREQUENCY SECONDARY RECTIFIERS MAJOR PRODUCTS CHARACTERISTICS IF(AV) 2x40 A VRRM 300 V VF (max) 1V trr (max) 60 ns FEATURES AND BENEFITS n n n COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE. ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. HIGH OPERATING TEMPERATURE THANKS TO LOW LEAKAGE CURRENT. A2 K A1 DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Max247 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current Per diode Per device 40 80 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 400 A IRSM Non repetitive avalanche current tp = 100 µs square 4 A Tstg Storage temperature range -55 +175 °C + 175 °C Tj Tc = 105°C δ = 0.5 Maximum operating junction temperature September 2002 - Ed: 3A 1/5 STTH8003CY THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case thermal resistance Rth (c) Value Unit Per diode Total 0.8 0.5 °C/W Coupling 0.2 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = 300 V Min. Tj = 25°C Tj = 125°C VF ** Forward voltage drop IF = 40 A Typ. 80 Tj = 25°C Max. Unit 80 µA 800 1.25 Tj = 125°C V 0.85 1 Typ. Max. Unit 50 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.0062 IF(RMS)2 DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr Tests Conditions IF = 0.5 A IF = 1 A IRM Irr = 0.25 A dIF/dt = - 50 A/µs IR = 1 A Min. Tj = 25°C VR = 30 V Vcc = 200 V IF = 40 A dIF/dt = -200 A/µs 60 Tj = 125°C 0.3 Sfactor tfr VFP 2/5 13 IF = 40 A dIF/dt = 200 A/µs, VFR = 1.1 x VF max Tj = 25°C A - 450 ns 5 V STTH8003CY Fig. 1: Conduction losses versus average current (per diode) Fig. 2: Forward voltage drop versus forward current (per diode) P(W) 55 50 45 40 35 30 25 20 15 10 5 0 IFM(A) 200 δ = 0.5 Tj=125°C Typical values 100 δ = 0.2 δ = 0.1 Tj=125°C Maximum values δ=1 δ = 0.05 Tj=25°C Maximum values 10 T IF(av) (A) 0 5 10 15 20 25 δ=tp/T 30 35 VFM(V) tp 40 45 1 0.2 50 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration 0.4 0.6 0.8 1.0 1.2 1.4 1.8 2.0 2.2 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode) Zth(j-c)/Rth(j-c) IRM(A) 1.0 25 VR=200V Tj=125°C 0.8 0.6 1.6 20 IF=2 x IF(av) IF=IF(av) δ = 0.5 15 IF=0.5 x IF(av) 0.4 δ = 0.2 10 δ = 0.1 0.2 T Single pulse 0.0 1E-3 5 tp(s) 1E-2 δ=tp/T 1E-1 dIF/dt(A/µs) tp 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode) 0 0 100 150 200 250 300 350 400 450 500 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode) S factor trr(ns) 180 160 140 120 100 80 60 40 20 0 50 VR=200V Tj=125°C 0.6 VR=200V Tj=125°C 0.5 0.4 IF=2 x IF(av) IF=IF(av) 0.3 0.2 IF=0.5 x IF(av) 0.1 dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0.0 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH8003CY Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj = 125°C) VFP(V) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 10 IF=IF(av) Tj=125°C S factor 8 6 4 IRM 2 Tj(°C) 50 75 dIF/dt(A/µs) 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode) tfr(ns) 500 IF=IF(av) VFR=1.1 x VFmax Tj=125°C 400 300 200 100 dIF/dt(A/µs) 0 4/5 0 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode) 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 250 300 350 400 450 500 STTH8003CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A D L1 A1 L b1 b2 e n n b Millimeters Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 c Ordering code Marking Package Weight Base qty Delivery mode STTH8003CY STTH8003CY Max247 4.4 g. 30 Tube Cooling method: C Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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