STMICROELECTRONICS W13NK100Z

STW11NK100Z
STW13NK100Z
N-channel 1000V - 0.56Ω - 13A - TO-247
Zener - Protected SuperMESH™ PowerMOSFET
General features
Type
VDSS
(@Tjmax)
STW13NK100Z
1000 V
RDS(on)
ID
PW
< 0.70 Ω 13 A 350W
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
TO-247
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STW13NK100Z
W13NK100Z
TO-247
Tube
August 2006
Rev 5
1/14
www.st.com
14
Contents
STW13NK100Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
2
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STW13NK100Z
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
1000
V
Drain-gate voltage (RGS = 20KΩ)
1000
V
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
13
A
ID
Drain current (continuous) at TC=100°C
8.2
A
IDM(1)
Drain current (pulsed)
52
A
PTOT
Total dissipation at TC = 25°C
350
W
Derating Factor
2.7
W/°C
6000
V
4
V/ns
-55 to 150
°C
VESD (G-S)
dv/dt
(2)
TJ
Tstg
Gate source ESD(HBM-C=100pF, R=1,5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤8.3 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
Symbol
Rthj-case
Thermal data
Parameter
Thermal resistance junction-case Max
Value
Unit
0.36
°C/W
Rthj-a
Thermal resistance junction-ambient Max
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
13
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
700
mJ
3/14
Electrical ratings
Table 4.
Symbol
BVGSO
1.1
STW13NK100Z
Gate-source zener diode
Parameter
Test conditions
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
Min.
Typ.
30
Max.
Unit
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/14
STW13NK100Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
Gate body leakage current
VGS = ± 20V
(VGS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 150 µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6.5 A
Table 6.
Symbol
Min.
Typ.
Max.
Unit
1000
3
V
1
10
µA
µA
±10
µA
3.75
4.5
V
0.56
0.70
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance VDS =15V, ID = 6.5 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Min.
14
S
VDS =25V, f=1 MHz, VGS=0
6000
455
100
pF
pF
pF
Equivalent output
capacitance
VGS=0, VDS =0V to 800V
227
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=500 V, ID= 7A,
RG=4.7Ω, VGS=10V
(see Figure 16)
45
35
145
45
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800V, ID = 13A
VGS =10V
190
30
100
Cosseq(2).
266
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/14
Electrical characteristics
Table 7.
Symbol
ISD
Source drain diode
Parameter
Min
Typ.
Max
Unit
Source-drain current
13
A
Source-drain current (pulsed)
52
A
(2)
Forward on voltage
ISD=8.3A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=13 A,
di/dt = 100A/µs,
VDD=100 V, Tj=25°C
(see Figure 18)
820
12.7
31
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=13 A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 18)
1050
17.8
34
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
6/14
Test conditions
(1)
ISDM
VSD
STW13NK100Z
STW13NK100Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
7/14
Electrical characteristics
STW13NK100Z
Figure 5.
Transconductance
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
8/14
Figure 6.
Static drain-source on resistance
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
STW13NK100Z
Figure 11. Source-drain diode forward
characteristics
Electrical characteristics
Figure 12. Normalized BVDSS vs temperature
Figure 13. Maximum avalanche
energy vs temperature
9/14
Test circuit
3
STW13NK100Z
Test circuit
Figure 14. Unclamped Inductive load test
circuit
Figure 15. Unclamped Inductive waveform
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
10/14
STW13NK100Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data
STW13NK100Z
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/14
TYP
5.50
0.216
STW13NK100Z
5
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
22-Jun-2004
1
Target document
09-Sep-2004
2
Preliminary document
28-Jan-2005
3
Complete version with curves
18-Sep-2005
4
Figure 12 changed
01-Aug-2006
5
New template, no content change
13/14
STW13NK100Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14