2N5769 PN2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current IEBO UNITS V 40 V 15 V 4.5 V IC ICM PD 200 mA TJ, Tstg VCEO VEBO mA 350 mW -65 to +150 °C CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=20V MAX 400 UNITS nA VCB=20V, TA=125°C VCE=20V (2N5769) 30 µA 400 nA 1.0 µA Operating and Storage Junction Temperature ICES 40 500 Power Dissipation ELECTRICAL SYMBOL ICBO ICBO SYMBOL VCBO VCES BVCBO VEB=4.5V (2N5769) IC=10µA 40 BVCES IC=10µA 40 V BVCEO IC=10mA 15 V BVEBO IE=10µA 4.5 VCE(SAT) IC=10mA, IB=1.0mA IC=30mA, IB=3.0mA 200 250 mV 500 mV VBE(SAT) IC=100mA, IB=10mA IC=10mA, IB=1.0mA 850 mV VBE(SAT) IC=30mA, IB=3.0mA 1.15 V VBE(SAT) IC=100mA, IB=10mA VCE=0.35V, IC=10mA (2N5769) 1.6 V VCE(SAT) VCE(SAT) hFE hFE hFE hFE VCE=1.0V, IC=10mA (PN2369A) VCE=0.4V, IC=30mA VCE=1.0V, IC=100mA 700 V V 40 120 40 120 mV 30 20 R1 (10-March 2011) 2N5769 PN2369A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 500 Cob VCB=5.0V, IE=0, f=140kHz 4.0 Cib ton toff ts UNITS MHz pF VEB=5.0V, IC=0, f=1.0MHz (PN2369A) VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 5.0 pF 12 ns VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA VCC=10V, IC=10mA, IB1=IB2=10mA 18 ns 13 ns TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (10-March 2011) w w w. c e n t r a l s e m i . c o m