, Una. L/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1568 Silicon PNP Darlington Power Transistor 1 DESCRIPTION • Collector-Emitter Breakdown Vbltage: V(BR)CEo= -80V(Min) • High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, lc= -2A) R- PIN 1 BASE 2. COLLECTOR • Complement to Type 2SD2399 3. EMITTER 1 2 3 TO-220F package APPLICATIONS C - • Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT V VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V Collector Current-Continuous -4 A Ic I CM - R- Collector Current-Peak -6 Collector Power Dissipation @Ta=25t: 2 A W PC Collector Power Dissipation @TC=25"C 30 Tj Junction Temperature 150 •c Tstg Storage Temperature -55-150 °c Q N - J -- mm DIM WIN A 14.95 B 10.00 C 4.40 D 0.75 3.10 F 3.70 H 0.50 J K 13.4 1.10 L N 5.00 Q 2.70 R 2.20 2.65 S 6.40 U MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Darlington Power Transistor 2SB1568 ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA;l B =0 -80 V V(BR)CBO Collector-Base Breakdown Voltage lc= -50 n A; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; lc= 0 -7 V VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; !B= -4mA -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 nA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -3.0 mA hFE DC Current Gain lc= -2A; VCE= -3V Current-Gain— Bandwidth Product lc= -0.5A;VCE= -5V; f= 10MHz 12 MHz Collector Output Capacitance l E =0;V G B=-10V;f=1MHz 35 pF fi COB 1000 10000