J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 PIN 1.BASE 2. COLLECTOR 1 2 3. EMITTER TO-3PL package 3 APPLICATIONS • Designed for power amplifier applications in .*T • Optimum for 55W HiFi output applications. \ ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL PARAMETER A D VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -5 A uWf U iW !'-**M mm Ic I CM Collector Current-Peak -8 Collector Power Dissipation @ Tc=25"C 60 W PC Tj Tstg A Collector Power Dissipation @ Ta=25-C 3.5 Junction Temperature 150 Storage Temperature Range -55-150 °C 'C DIM WIN A B C D E F G 2S.50 1950 4.50 0.90 2.30 2.40 10.80 3.10 H J K N P q R U W 0^0 20.00 3.90 2.40 3.10 1.90 3.90 2.90 MAX 20 JO 5.50 1.10 1.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Quality Semi-Conductors 2SB1502 Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25"C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; !B= -4mA -2.5 V VeE(sat) Base-Emitter Saturation Voltage lc= -4A; IB= -4mA -3.0 V ICBO Collector Cutoff Current V CB =-120V;I E =0 -100 uA ICED Collector Cutoff Current VCE=-100V;IB=0 -100 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -100 uA hpE-1 DC Current Gain lc=-1A; V0E=-5V 2000 hpE-2 DC Current Gain lc= -4A; VCE= -5V 5000 Current-Gain— Bandwidth Product lc=-0.5A;V C E=-10V fi CONDITIONS MIN TYP. MAX -100 UNIT V 30000 20 MHz 1.0 us 0.8 11 S 1.0 us Switching Times ton Turn-on Time tstg Storage Time lc= ~4A; IB1= -Is2= -4mA, Vcc- -50V Fall Time tf hFE_2 Classifications Q S P 5000-15000 7000-21000 8000-30000