2N6771/6772/6773 - New Jersey Semiconductor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6771/6772/6773
Silicon NPN Power Transistors
DESCRIPTION
• Collector-Emitter Sustaining Voltage: VCEO(SUS)= SOOV(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for use in off-line power supplies
and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
3.
PIN 1.BASE
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
2. EMITTER
SYMBOL
3. COLLECT OR (CASE)
VCEV
VcEO(SUS)
PARAMETER
Collector-Emitter Voltage
VBE=-1.5V
Collector-Emitter Voltage
VALUE
2N6771
450
2N6772
550
2N6773
650
2N6771
300
2N6772
350
2N6773
400
UNIT
TO-3 package
2
V
^
i
I
tE
-JU-D
V
I
i_
C
r GB
/ it f
/CN""\-9—<
Emitter-Base Voltage
8
V
Collector Current-Continuous
8
A
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
DM
A
PC
Collector Power [email protected]=25°C
150
W
B
25.30
Tj
Junction Temperature
200
"C
Tstg
Storage Temperature
-65-200
°c
MAX
UNIT
C
D
E
G
H
K
L
N
Q
780
8.30
090
1.10
140
1.60
10.9?
548
1140 13.50
1675 17XB
1S.40 19.82
4.00
4.20
VEBO
Ic
ICM
!
*PL
5
f
\^: ^S'
M3S
c;
B
J
mm
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
1.17
'C/W
DM
MAX
39 90
26.S7
U
3000
J02Q
£
430
4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N6771/6772/6773
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
CONDITIONS
PARAMETER
2N6771
VcEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6772
MIN
TYP.
MAX
UNIT
300
lc= 200mA ; IB= 0
2N6773
350
V
400
VcE(sat)-1
Collector-Emitter Saturation Voltage
lc= 5A; IB= 1A
lc=5A;l B =1A,Tc= 125'C
1.0
2.0
V
VcE(sat)-2
Collector-Emitter Saturation Voltage
lc= 8A; IB= 4A
2.0
V
Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
1.6
V
2N6771
VCE=450V;VBE=-1.5V
VCE= 450V;VBE= -1 .5V,TC= 125'C
0.1
2N6772
VCE= 550V;VBE= -1 .5V
VCE= 550V;VBE= -1.5V,TC= 125'C
0.1
1.0
2N6773
VCE=650V;VBE=-1-5V
Vce= 650V;VBE= -1.5V,TC= 125'C
0.1
1.0
2.0
VBE(sat)
ICEV
Collector
Cutoff Current
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 8V; lc=0
UPS
DC Current Gain
lc= 5A ; VC6= 3V
10
40
COB
Output Capacitance
lE=0;VCB=10V;fteSt=1MHz
50
300
PF
Current-Gain—Bandwidth Product
lc=0.2A;VCE=10V
15
60
MHz
0.1
us
0.5
us
Storage Time
2.5
us
Fall Time
0.4
us
fr
mA
Switching Times
td
Delay Time
tr
Rise Time
1C
'stg
tf
5A, IB1
-IB2- TA