<3s.mi-L.onau.ctoi iJ~* ma. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6771/6772/6773 Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= SOOV(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. 3. PIN 1.BASE ABSOLUTE MAXIMUM RATINGS(Ta=25°C) 2. EMITTER SYMBOL 3. COLLECT OR (CASE) VCEV VcEO(SUS) PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage VALUE 2N6771 450 2N6772 550 2N6773 650 2N6771 300 2N6772 350 2N6773 400 UNIT TO-3 package 2 V ^ i I tE -JU-D V I i_ C r GB / it f /CN""\-9—< Emitter-Base Voltage 8 V Collector Current-Continuous 8 A Collector Current-Peak 10 A IB Base Current-Continuous 4 A DM A PC Collector Power Dissipation@Tc=25°C 150 W B 25.30 Tj Junction Temperature 200 "C Tstg Storage Temperature -65-200 °c MAX UNIT C D E G H K L N Q 780 8.30 090 1.10 140 1.60 10.9? 548 1140 13.50 1675 17XB 1S.40 19.82 4.00 4.20 VEBO Ic ICM ! *PL 5 f \^: ^S' M3S c; B J mm THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case 1.17 'C/W DM MAX 39 90 26.S7 U 3000 J02Q £ 430 4.50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N6771/6772/6773 Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL CONDITIONS PARAMETER 2N6771 VcEO(SUS) Collector-Emitter Sustaining Voltage 2N6772 MIN TYP. MAX UNIT 300 lc= 200mA ; IB= 0 2N6773 350 V 400 VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A lc=5A;l B =1A,Tc= 125'C 1.0 2.0 V VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 4A 2.0 V Base-Emitter Saturation Voltage lc= 5A; IB= 1A 1.6 V 2N6771 VCE=450V;VBE=-1.5V VCE= 450V;VBE= -1 .5V,TC= 125'C 0.1 2N6772 VCE= 550V;VBE= -1 .5V VCE= 550V;VBE= -1.5V,TC= 125'C 0.1 1.0 2N6773 VCE=650V;VBE=-1-5V Vce= 650V;VBE= -1.5V,TC= 125'C 0.1 1.0 2.0 VBE(sat) ICEV Collector Cutoff Current 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; lc=0 UPS DC Current Gain lc= 5A ; VC6= 3V 10 40 COB Output Capacitance lE=0;VCB=10V;fteSt=1MHz 50 300 PF Current-Gain—Bandwidth Product lc=0.2A;VCE=10V 15 60 MHz 0.1 us 0.5 us Storage Time 2.5 us Fall Time 0.4 us fr mA Switching Times td Delay Time tr Rise Time 1C 'stg tf 5A, IB1 -IB2- TA