ONSEMI MM3Z27VST1G

MM3ZxxxST1G Series,
SZMM3ZxxxST1G Series
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
Tight Tolerance Portfolio
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This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand−held portables,
and high density PC boards.
SOD−323
CASE 477
STYLE 1
Specification Features
• Standard Zener Breakdown Voltage Range − 3.3 V to 36 V
• Steady State Power Rating of 200 mW
• Small Body Outline Dimensions:
•
•
•
•
•
•
•
− 0.067″ x 0.049″ (1.7 mm x 1.25 mm)
Low Body Height: 0.035″ (0.9 mm)
Package Weight: 4.507 mg/unit
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance VZ
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
1
Cathode
2
Anode
MARKING DIAGRAM
XXMG
G
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
260°C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn only (Pb−Free)
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
ORDERING INFORMATION
Package
Shipping†
MM3ZxxxST1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
SZMM3ZxxxST1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
MM3ZxxxST3G
SOD−323
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 20
1
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
MM3Z2V4ST1/D
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
MAXIMUM RATINGS
Rating
Symbol
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Max
Unit
200
1.5
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
−65 to +150
°C
PD
Thermal Resistance from Junction−to−Ambient
Junction and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 Minimum Pad.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
QVZ
C
I
IF
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Zener Voltage Regulator
Max. Capacitance @VR = 0 and f = 1 MHz
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2
V
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)
ZZT
IZ = IZT
@ 10%
Mod W
Max
mA
V
Min
Max
C pF Max @
VR = 0
f = 1 MHz
Max
IR @ VR
dVZ/dt (mV/k)
@ IZT1 = 5 mA
Min
Max
ZZK IZ
= 0.5
mA W
Max
5.0
2.90
3.11
1000
100
10
1.0
−3.5
0
450
T5
5.0
3.32
3.53
1000
95
5.0
1.0
−3.5
0
450
MM3Z3V9ST1G
T7
5.0
3.89
4.16
1000
90
3.0
1.0
−3.5
−2.5
450
MM3Z4V3ST1G
T8
5.0
4.17
4.43
1000
90
3.0
1.0
−3.5
0
450
MM3Z4V7ST1G
T9
5.0
4.55
4.75
800
80
3.0
2.0
−3.5
0.2
260
MM3Z5V1ST1G
TA
5.0
4.98
5.2
500
60
2.0
2.0
−2.7
1.2
225
MM3Z5V6ST1G
TC
5.0
5.49
5.73
200
40
1.0
2.0
−2.0
2.5
200
MM3Z6V2ST1G
TE
5.0
6.06
6.33
100
10
3.0
4.0
0.4
3.7
185
MM3Z6V8ST1G
TF
5.0
6.65
6.93
160
15
2.0
4.0
1.2
4.5
155
MM3Z7V5ST1G
TG
5.0
7.28
7.6
160
15
1.0
5.0
2.5
5.3
140
MM3Z8V2ST1G
TH
5.0
8.02
8.36
160
15
0.7
5.0
3.2
6.2
135
MM3Z9V1ST1G
TK
5.0
8.85
9.23
160
15
0.5
6.0
3.8
7.0
130
MM3Z10VST1G
WB
5.0
9.80
10.20
160
15
0.5
6.0
4.5
8.0
130
MM3Z12VST1G
TN
5.0
11.74
12.24
80
25
0.1
8.0
6.0
10
130
MM3Z13VST1G
TQ
5.0
12.91
13.49
160
30
0.1
8.0
7.0
11
120
MM3Z15VST1G
TP
5.0
14.34
14.98
80
40
0.1
11
8.8
12.7
130
MM3Z16VST1G
TU
5.0
15.85
16.51
80
40
0.05
11.2
10.4
14
105
MM3Z18VST1G
TW
5.0
17.56
18.35
80
45
0.05
12.6
12.4
16
100
MM3Z22VST1G
WP
5.0
21.54
22.47
100
55
0.05
15.4
16.4
20
85
MM3Z24VST1G
WT
5.0
23.72
24.78
120
70
0.05
16.8
18.4
22
80
MM3Z27VST1G
WQ
5.0
26.19
27.53
300
80
0.05
18.9
21.4
25.3
70
MM3Z33VST1G
WR
5.0
32.15
33.79
300
80
0.05
23.2
27.4
33.4
70
MM3Z36VST1G
WU
5.0
35.07
36.87
500
90
0.05
25.2
30.4
37.4
70
MM3Z39VST1G
WN
2.0
38.22
39.78
500
130
0.05
27.3
33.4
41.2
45
Device
Marking
Test
Current
Izt mA
MM3Z3V0ST1G
T4
MM3Z3V3ST1G
Device*
Zener Voltage VZ
*Include SZ-prefix devices where applicable.
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3
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
TYPICAL CHARACTERISTICS
1000
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT , DYNAMIC IMPEDANCE ( Ω )
1000
100
100
IZ = 1 mA
10
5 mA
1.0
3.0
75°C
1.0
10
150°C
10
0.4
0.5
1.1
0 V BIAS
1 V BIAS
100
BIAS AT
50% OF VZ NOM
10
IR, LEAKAGE CURRENT ( μ A)
1000
TA = 25°C
100
10
1.0
+150°C
0.1
0.01
+ 25°C
0.001
−55°C
0.0001
1.0
1.2
Figure 2. Typical Forward Voltage
1000
C, CAPACITANCE (pF)
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE
Figure 1. Effect of Zener Voltage on
Zener Impedance
25°C
4.0
10
0.00001
VZ, NOMINAL ZENER VOLTAGE (V)
5.0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 3. Typical Capacitance
Figure 4. Typical Leakage Current
100
0
10
100
80
10
POWER DISSIPATION (%)
I Z , ZENER CURRENT (mA)
TA = 25°C
1.0
0.1
0.01
0
2.0
4.0
6.0
VZ, ZENER VOLTAGE (V)
8.0
10
60
40
20
0
0
25
50
75
100
TEMPERATURE (°C)
125
Figure 6. Steady State Power Derating
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 9 V)
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4
150
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
A1
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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MM3Z2V4ST1/D