ONSEMI SZMM3ZxxxT1G

MM3ZxxxT1G Series,
SZMM3ZxxxT1G Series
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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SOD−323
CASE 477
STYLE 1
Specification Features:






0.067” x 0.049” (1.7 mm x 1.25 mm)
Low Body Height: 0.035” (0.9 mm)
Package Weight: 4.507 mg/Unit
ESD Rating of Class 3 (> 16 kV) per Human Body Model
AEC−Q101 Qualified and PPAP Capable − SZMM3ZxxxT1G
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices*
1
Cathode
2
Anode
MARKING DIAGRAM
xx
M
 Standard Zener Breakdown Voltage Range − 2.4 V to 75 V
 Steady State Power Rating of 200 mW
 Small Body Outline Dimensions:
G
G
Mechanical Characteristics:
CASE: Void-free, Transfer-Molded Plastic
FINISH: All External Surfaces are Corrosion Resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn Only (Pb−Free)
POLARITY: Cathode Indicated by Polarity Band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
Rating
Symbol
PD
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MAXIMUM RATINGS
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25C
Derate above 25C
xx = Specific Device Code
M = Date Code*
G = Pb−Free Package
Max
Unit
200
1.5
mW
mW/C
Thermal Resistance, Junction−to−Ambient
RqJA
635
C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad
Package
Shipping†
MM3ZxxxT1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
SZMM3ZxxxT1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 9
1
Publication Order Number:
MM3Z2V4T1/D
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
ELECTRICAL CHARACTERISTICS
Symbol
I
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
QVZ
C
IF
VZ VR
V
IR VF
IZT
Maximum Temperature Coefficient of VZ
Zener Voltage Regulator
Max. Capacitance @VR = 0 and f = 1 MHz
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Zener Voltage (Note 2)
VZ (Volts)
@ IZT
Zener Impedance
ZZT
@ IZT
Leakage Current
ZZK @ IZK
IR @ VR
C
@ VR = 0
f = 1 MHz
QVZ
(mV/k)
@ IZT
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA
Volts
Min
Max
pF
MM3Z2V4T1G
MM3Z2V7T1G
MM3Z3V0T1G
MM3Z3V3T1G
MM3Z3V6T1G
00
01
02
05
06
2.2
2.5
2.8
3.1
3.4
2.4
2.7
3.0
3.3
3.6
2.6
2.9
3.2
3.5
3.8
5
5
5
5
5
100
100
100
95
90
1000
1000
1000
1000
1000
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
1.0
1.0
1.0
1.0
1.0
−3.5
−3.5
−3.5
−3.5
−3.5
0
0
0
0
0
450
450
450
450
450
MM3Z3V9T1G
MM3Z4V3T1G
MM3Z4V7T1G
MM3Z5V1T1G
MM3Z5V6T1G
07
08
09
0A
0C
3.7
4.0
4.4
4.8
5.2
3.9
4.3
4.7
5.1
5.6
4.1
4.6
5.0
5.4
6.0
5
5
5
5
5
90
90
80
60
40
1000
1000
800
500
200
0.5
0.5
0.5
0.5
0.5
3
3
3
2
1
1.0
1.0
2.0
2.0
2.0
−3.5
−3.5
−3.5
−2.7
−2.0
−2.5
0
0.2
1.2
2.5
450
450
260
225
200
MM3Z6V2T1G
MM3Z6V8T1G
MM3Z7V5T1G
MM3Z8V2T1G
MM3Z9V1T1G
0E
0F
0G
0H
0K
5.8
6.4
7.0
7.7
8.5
6.2
6.8
7.5
8.2
9.1
6.6
7.2
7.9
8.7
9.6
5
5
5
5
5
10
15
15
15
15
100
160
160
160
160
0.5
0.5
0.5
0.5
0.5
3
2
1
0.7
0.2
4.0
4.0
5.0
5.0
7.0
0.4
1.2
2.5
3.2
3.8
3.7
4.5
5.3
6.2
7.0
185
155
140
135
130
MM3Z10VT1G
MM3Z11VT1G
MM3Z12VT1G
MM3Z13VT1G
MM3Z15VT1G
0L
0M
0N
0P
0T
9.4
10.4
11.4
12.4
14.3
10
11
12
13.25
15
10.6
11.6
12.7
14.1
15.8
5
5
5
5
5
20
20
25
30
30
160
160
80
80
80
0.5
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.05
8.0
8.0
8.0
8.0
10.5
4.5
5.4
6.0
7.0
9.2
8.0
9.0
10
11
13
130
130
130
120
110
MM3Z16VT1G
MM3Z18VT1G
MM3Z20VT1G
MM3Z22VT1G
MM3Z24VT1G
0U
0W
0Z
10
11
15.3
16.8
18.8
20.8
22.8
16.2
18
20
22
24.2
17.1
19.1
21.2
23.3
25.6
5
5
5
5
5
40
45
55
55
70
80
80
100
100
120
0.5
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14.0
15.4
16.8
10.4
12.4
14.4
16.4
18.4
14
16
18
20
22
105
100
85
85
80
MM3Z27VT1G
MM3Z30VT1G
MM3Z33VT1G
MM3Z36VT1G
MM3Z39VT1G
12
14
18
19
20
25.1
28
31
34
37
27
30
33
36
39
28.9
32
35
38
41
2
2
2
2
2
80
80
80
90
130
300
300
300
500
500
0.5
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
0.05
18.9
21.0
23.2
25.2
27.3
21.4
24.4
27.4
30.4
33.4
25.3
29.4
33.4
37.4
41.2
70
70
70
70
45
MM3Z43VT1G
MM3Z47VT1G
MM3Z51VT1G
MM3Z56VT1G
21
1A
1C
1D
40
44
48
52
43
47
51
56
46
50
54
60
2
2
2
2
150
170
180
200
500
500
500
500
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
37.6
42.0
46.6
52.2
46.6
51.8
57.2
63.8
40
40
40
40
MM3Z68VT1G
MM3Z75VT1G
1F
1G
64
70
68
75
72
79
2
2
240
255
500
500
0.5
0.5
0.05
0.05
47.6
52.5
65.6
73.4
79.8
88.6
35
35
Device*
*Include SZ-prefix devices where applicable.
2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
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2
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
TYPICAL CHARACTERISTICS
1000
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT , DYNAMIC IMPEDANCE (  )
1000
100
100
IZ = 1 mA
5 mA
10
1.0
3.0
10
VZ, NOMINAL ZENER VOLTAGE
75C
1.0
80
150C
10
0.4
Figure 1. Effect of Zener Voltage on Zener Impedance
IR, LEAKAGE CURRENT (  A)
C, CAPACITANCE (pF)
0 V BIAS
100
1 V BIAS
BIAS AT
50% OF VZ NOM
10
1.1
1.2
4.0
10
VZ, NOMINAL ZENER VOLTAGE (V)
70
100
10
1.0
+150C
0.1
0.01
0.001
+ 25C
0.0001
−55C
0.00001
0
Figure 3. Typical Capacitance
100
10
1.0
0.1
2.0
4.0
6.0
8.0
VZ, ZENER VOLTAGE (V)
20
30
40
50
60
VZ, NOMINAL ZENER VOLTAGE (V)
100
TA = 25C
0
10
70
Figure 4. Typical Leakage Current
IZ , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
1000
TA = 25C
0.01
0C
Figure 2. Typical Forward Voltage
1000
1.0
0.5
25C
10
12
TA = 25C
10
1
0.1
0.01
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 6. Zener Voltage versus Zener Current
(12 V to 75 V)
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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3
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
TYPICAL CHARACTERISTICS
100
POWER DISSIPATION (%)
80
60
40
20
0
0
25
50
75
100
TEMPERATURE (C)
125
Figure 7. Steady State Power Derating
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4
150
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
A1
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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5
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MM3Z2V4T1/D