STMICROELECTRONICS STL18NM60N

STL18NM60N
N-channel 600 V, 0.260 Ω, 6 A PowerFLAT™ 8x8 HV
MDmesh™ II Power MOSFET
Features
Order code
VDSS @
TJmax
RDS(on)
max
ID
STL18NM60N
650 V
< 0.310 Ω
12 A (1)
3
3
3
"OTTOMVIEW
'
$
1. The value is rated according to Rthj-case
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
0OWER&,!4˜X(6
Applications
■
Switching applications
Description
Figure 1.
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL18NM60N
18NM60N
PowerFLAT™ 8x8 HV
Tape and reel
November 2011
Doc ID 018856 Rev 2
1/14
www.st.com
14
Contents
STL18NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
.............................................. 8
Doc ID 018856 Rev 2
STL18NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
Drain current (continuous) at TC = 25 °C
12
A
ID (1)
Drain current (continuous) at TC = 100 °C
7.5
A
ID(2)
Drain current (continuous) at Tamb = 25 °C
2.1
A
ID(2)
Drain current (continuous) at Tamb = 100 °C
1.2
A
Drain current (pulsed)
8.4
A
3
W
ID
IDM
(1)
(2),(3)
PTOT (2)
Total dissipation at Tamb = 25 °C
PTOT(1)
Total dissipation at TC = 25 °C
110
W
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
105
mJ
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
Value
Unit
dv/dt (4)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. The value is rated according to Rthj-case
2. When mounted on FR-4 board of inch², 2oz Cu
3. Pulse width limited by safe operating area
4. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
1.14
°C/W
Rthj-amb(1)
Thermal resistance junction-amb max
45
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 018856 Rev 2
3/14
Electrical characteristics
2
STL18NM60N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC= 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
3
4
V
0.260
0.310
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
2
VGS = 10 V, ID = 6 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1000
60
3
-
pF
pF
pF
Output equivalent
capacitance
VDS = 0 to 480 V, VGS = 0
-
225
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 13 A,
VGS = 10 V
(see Figure 14)
-
35
6
20
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/14
Switching times
Parameter
Turn-on delay time
Rise time
Turn-on delay time
Fall time
Test conditions
VDD = 300 V, ID = 13 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Doc ID 018856 Rev 2
Min.
Typ.
-
20
22
50
40
Max
Unit
-
ns
ns
ns
ns
STL18NM60N
Electrical characteristics
Table 7.
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
-
12
48
A
A
ISD = 12 A, VGS = 0
-
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 19)
-
300
4.0
25
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 60 V
di/dt = 100 A/µs, ISD = 13 A
Tj=150 °C (see Figure 19)
-
360
4.5
25
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018856 Rev 2
5/14
Electrical characteristics
STL18NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
!-V
)$
!
Zth PowerFLAT 8x8 HV
K
4J #
4C #
3INGLE
PULSE
δ=0.5
0.2
AI
O
N
-1
$3
/P
,IM ERAT
ITE ION
DB IN
YM THIS
AX AR
2 E
0.1
S
MS
MS
10
0.05
0.02
0.01
S
Single pulse
MS
-2
Figure 4.
)$ !
6$36
Output characteristics
6'36
6
tp (s)
10
Transfer characteristics
!-V
66
$3
6
Figure 6.
-2
-3
10
)$
!
-4
10
Figure 5.
!-V
10 -5
10
6$36
Normalized BVDSS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
Figure 7.
6'36
Static drain-source on resistance
AM09788v1
RDS(on)
(Ω)
0.270
1.08
VGS=10V
1.06
0.265
1.04
0.260
1.02
1.00
0.255
0.98
0.96
0.94
0.92
-50 -25
6/14
0.250
0.245
0
25
50
75 100
TJ(°C)
Doc ID 018856 Rev 2
0
2
4
6
8
10
12
ID(A)
STL18NM60N
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM05531v1
VGS
(V)
VDD=480V
12
Capacitance variations
AM05532v1
C
(pF)
500
ID=13A
1000
10
Ciss
400
VDS
8
300
100
6
Coss
200
4
10
100
2
0
20
10
0
0
Qg(nC)
40
30
Crss
1
0.1
Figure 10. Normalized gate threshold voltage
vs temperature
6'3TH
!-V
)—!
$
4* #
10
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
2$3ON
NORM
NORM
1
!-V
6'3
6
)!
$
4* #
Figure 12. Source-drain diode forward
characteristics
!-V
63$
6
4* #
4* #
4* #
)3$!
Doc ID 018856 Rev 2
7/14
Test circuits
3
STL18NM60N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
10%
Doc ID 018856 Rev 2
AM01473v1
STL18NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 018856 Rev 2
9/14
Package mechanical data
Table 8.
STL18NM60N
PowerFLAT™ 8x8 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
0.90
1.00
A1
0.00
0.02
0.05
b
0.95
1.00
1.05
D
8.00
E
8.00
D2
7.05
7.20
7.30
E2
4.15
4.30
4.40
e
L
10/14
2.00
0.40
0.50
aaa
0.10
bbb
0.10
ccc
0.10
Doc ID 018856 Rev 2
0.60
STL18NM60N
Package mechanical data
Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data
BOTTOM VIEW
b
CA B
L
bbb
0.40
E2
PIN#1 ID
D2
C
A
ccc C
A1
0.20±0.008
SIDE VIEW
SEATING
PLANE
0.08 C
D
A
B
E
INDEX AREA
aaa C
TOP VIEW
aaa C
8222871_Rev_B
Doc ID 018856 Rev 2
11/14
Package mechanical data
STL18NM60N
Figure 20. PowerFLAT™ 8x8 HV recommended footprint
0.60
7.70
4.40
7.30
2.00
1.05
Footprint
12/14
Doc ID 018856 Rev 2
STL18NM60N
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
19-May-2011
1
First release.
03-Nov-2011
2
Section 4: Package mechanical data has been updated.
Minor text changes.
Doc ID 018856 Rev 2
13/14
STL18NM60N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
Doc ID 018856 Rev 2