STMICROELECTRONICS STU10NM60N

STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK
MDmesh™ II Power MOSFET
Features
Order codes
VDSS
@TJmax
RDS(on)
max.
Pw
ID
STD10NM60N
1
STF10NM60N
STP10NM60N
650 V
< 0.55 Ω
25 W
10 A
3
3
70 W
2
1
TO-220
2
TO-220FP
70 W
STU10NM60N
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
2
3
1
IPAK
1
DPAK
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
$
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmesh™ technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD10NM60N
10NM60N
DPAK
Tape and reel
STF10NM60N
10NM60N
TO-220FP
Tube
STP10NM60N
10NM60N
TO-220
Tube
STU10NM60N
10NM60N
IPAK
Tube
November 2010
Doc ID 15764 Rev 5
1/17
www.st.com
17
Contents
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220 TO-220FP IPAK DPAK
VGS
Gate- source voltage
± 25
ID
Drain current (continuous) at TC = 25 °C
10
(1)
ID
Drain current (continuous) at TC = 100 °C
5
IDM
(2)
PTOT
dv/dt
(3)
Drain current (pulsed)
32
Total dissipation at TC = 25 °C
70
10
V
5 (1)
32
(1)
25
Peak diode recovery voltage slope
10
A
5
A
32
A
70
W
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤10 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 TO-220FP IPAK DPAK
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Rthj-pcb
Thermal resistance junction-pcb max
TJ
Table 4.
Symbol
Maximum lead temperature for soldering
purpose
1.79
5
1.79
62.50
°C/W
100
°C/W
50
300
°C/W
°C/W
Avalanche characteristics
Parameter
Value
Unit
IAS
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max)
4
A
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
200
mJ
Doc ID 15764 Rev 5
3/17
Electrical characteristics
2
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
VDS = max rating
Zero gate voltage
drain current (VGS = 0) VDS = max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
3
4
V
0.53
0.55
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V; VDS=0
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 6.
Symbol
2
VGS = 10 V, ID = 4 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
540
44
1.2
-
pF
pF
pF
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0
-
110
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
6
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 8 A,
VGS = 10 V
(see Figure 17)
-
19
3
10
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
4/17
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Electrical characteristics
Min.
Typ.
-
10
12
32
15
Max Unit
-
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Min. Typ. Max
Unit
-
8
32
A
A
1.3
V
Forward on voltage
ISD = 8 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
-
250
2.12
17
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
-
315
2.6
16.5
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15764 Rev 5
5/17
Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Figure 5.
Thermal impedance for TO-220FP
AM03944v1
ID
(A)
1µs
10
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-220FP
AM03945v1
ID
(A)
)
on
10µs
D
S(
O
p
Li era
m ti
ite on
d in
by t
m his
ax a
R rea
is
10
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for DPAK, IPAK Figure 7.
AM03944v1
ID
(A)
1µs
10
)
on
100µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Sinlge
pulse
0.01
0.1
6/17
1
10
100
VDS(V)
Doc ID 15764 Rev 5
Thermal impedance for DPAK, IPAK
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 8.
Output characteristics
Figure 9.
AM03947v1
ID
(A)
14
VGS=10V
Electrical characteristics
Transfer characteristics
AM03948v1
ID
(A)
14
VDS=20V
6V
12
12
10
10
8
8
6
6
5V
4
4
2
2
4V
0
0
5
Figure 10.
10
15
20
30
25
0
0
VDS(V)
2
4
6
8
10
VGS(V)
Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance
AM03955v1
BVDSS
(norm)
AM00891v1
RDS(on)
(Ω)
ID=1mA
1.07
0.56
1.05
1.03
0.52
1.01
0.48
0.99
0.97
VGS=10V
0.44
0.95
0.93
-50 -25
0
25
75 100
50
TJ(°C)
0.40
0
2
4
8
6
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM03951v1
VGS
(V)
VGS
VDD=480V
12
ID=4A
10
AM03952v1
C
(pF)
1000
VDS
Ciss
8
100
6
Coss
4
10
2
Crss
0
0
5
10
15
20
Qg(nC)
Doc ID 15764 Rev 5
1
0.1
1
10
100
VDS(V)
7/17
Electrical characteristics
Figure 14.
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM03953v1
ID=250µA
1.10
AM03954v1
RDS(on)
(norm)
2.1
1.9
ID=4A
VGS=10V
1.7
1.00
1.5
1.3
0.90
1.1
0.80
0.9
0.70
-50 -25
0.5
-50 -25
0.7
8/17
0
25
50
75 100
TJ(°C)
Doc ID 15764 Rev 5
0
25
50
75 100
TJ(°C)
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
Figure 19. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 20. Unclamped inductive waveform
AM01471v1
Figure 21. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 15764 Rev 5
10%
AM01473v1
9/17
Package mechanical data
4
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/17
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 22. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 15764 Rev 5
11/17
Package mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
ty p
ma x .
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4. 70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
12/17
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
Doc ID 15764 Rev 5
13/17
Package mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
(L1)
0.80
9.40
1.20
L2
0.80
V1
10 o
0068771_H
14/17
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
5
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
inch
MAX.
MIN.
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
D
1.5
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
A0
B1
inch
MAX.
12.1
0.476
1.6
0.059 0.063
D1
1.5
E
1.65
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
R
40
W
15.7
0.075 0.082
1.574
16.3
0.618
0.641
Doc ID 15764 Rev 5
15/17
Revision history
6
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Revision history
12
Table 10.
16/17
Document revision history
Date
Revision
Changes
10-Jun-2009
1
First release
12-Jan-2010
2
Figure 4: Safe operating area for TO-220FP has been corrected
31-Mar-2010
3
Features have been corrected
17-Sep-2010
4
Content reworked to improve readability
24-Nov-2010
5
Corrected ID value
Doc ID 15764 Rev 5
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15764 Rev 5
17/17