TSC TSM2N7002KCXRFG

TSM2N7002K
60V N-Channel MOSFET
SOT-23
SOT-323
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
Pin Definition:
1. Gate
2. Source
3. Drain
60
Features
●
Low On-Resistance
●
ESD Protected 2KV
●
High Speed Switching
●
Low Voltage Drive
ID (mA)
2 @ VGS = 10V
300
4 @ VGS = 4.5V
200
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM2N7002KCX RF
TSM2N7002KCX RFG
TSM2N7002KCU RF
TSM2N7002KCU RFG
SOT-23
SOT-23
SOT-323
SOT-323
3Kpcs / 7” Reel
3Kpcs / 7” Reel
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous @ TA=25ºC
ID
300
Pulsed
IDM
800
Continuous @ TA=25ºC
IDR
300
Pulsed
IDMR
800
Maximum Power Dissipation
PD
300
Operating Junction Temperature
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
Unit
TL
5
S
RӨJA
350
Drain Current
Drain Reverse Current
Operating Junction and Storage Temperature Range
mA
mA
mW
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
o
C/W
Notes:
a. Pulse width ≤300us, Duty cycle ≤2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS =0V, ID =250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS =VGS, ID =250µA
VGS(TH)
1.0
1.5
2.5
V
Gate Body Leakage
VGS =±20V, VDS =0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS =60V, VGS =0V
IDSS
--
--
1.0
uA
--
1.2
2
--
2
4
Drain-Source On-State Resistance
VGS =10V, ID =300mA
VGS =4.5V, ID =100mA
RDS(ON)
Ω
Forward Transconductance
VDS =10V, ID =200mA
gfs
100
--
--
mS
Diode Forward Voltage
IS =300mA, VGS =0V
VSD
--
0.8
1.4
V
Qg
--
0.4
0.6
nC
b
Dynamic
Total Gate Charge
Input Capacitance
VDS =10V, ID = 250mA,
VGS =4.5V
Ciss
--
30
--
Coss
--
6
--
Crss
--
2.5
--
td(on)
--
--
25
ID =200mA, VGEN =10V,
Turn-Off Delay Time
td(off)
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
--
--
35
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
c
Turn-On Delay Time
VDD =30V, RG =10Ω
2/7
nS
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
bp
C
D
E
e
e1
HE
LP
Q
V
W
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
1.00 BSC
0.039 BSC
-0.10
-0.004
0.37
0.42
0.014
0.016
0.15
0.09
0.005
0.004
2.80
3.00
0.118
0.110
1.20
1.40
0.047
0.055
1.9 BSC
0.075 BSC
0.95 BSC
0.037 BSC
2.35
2.45
0.093
0.096
0.15
0.45
0.005
0.018
0.022
0.45
0.55
0.018
0.2 BSC
0.007 BSC
0.1 BSC
0.004 BSC
Marking Diagram
5/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
SOT-323 Mechanical Drawing
DIM
A
A1
bp
C
D
E
e
e1
HE
Lp
Q
W
SOT-323 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
0.80
1.10
0.031
0.043
-0.10
-0.004
0.30
0.40
0.012
0.016
0.10
0.25
0.004
0.010
1.80
2.20
0.071
0.087
1.15
1.35
0.045
0.053
1.30 BSC
0.051 BSC
0.65 BSC
0.026 BSC
2.00
2.20
0.079
0.087
0.15
0.45
0.006
0.018
0.20 BSC
0.007 BSC
0.20 BSC
0.007 BSC
Marking Diagram
6/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Notice
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7/7
Version: C11