TSC TSM80N08CZC0

TSM80N08
75V N-Channel Power MOSFET
TO-220
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
Features
VDS (V)
RDS(on)(mΩ)
ID (A)
75
8 @ VGS =10V
80
Block Diagram
●
Advanced Trench Technology
●
Low RDS(ON) 8mΩ (Max.)
●
Low gate charge typical @ 91.5nC (Typ.)
●
Low Crss typical @ 203pF (Typ.)
Ordering Information
Part No.
Package
Packing
TO-220
50pcs / Tube
TSM80N08CZ C0
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
±25
80
60
12
9
320
V
Continuous Drain Current
TC=25°C
TC=70°C
TA=25°C
TA=70°C
ID
Drain Current-Pulsed Note 1
IDM
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
IAS
EAS
Maximum Power Dissipation
TC=25°C
TC=70°C
TA=25°C
TA=70°C
Storage Temperature Range
Operating Junction Temperature Range
A
A
35
183
113.6
72.7
2
1.3
A
mJ
TSTG
TJ
-55 to +150
-55 to +150
°C
°C
Symbol
Limit
PD
W
* Limited by maximum junction temperature
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
1/6
1.1
62.5
Unit
o
C/W
C/W
o
Version: B13
TSM80N08
75V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
75
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 40A
RDS(ON)
--
6
8
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2
3
4
V
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±25V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
91.5
--
Qgs
--
34
--
Qgd
--
19.9
--
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 30V, ID = 40A,
VGS = 10V
VDS = 30V, VGS = 0V,
f = 1.0MHz
Ciss
--
3905
--
Coss
--
371
--
Crss
--
203
--
td(on)
--
21.5
--
tr
--
11
--
td(off)
--
73
--
tf
--
66
--
VSD
-
0.8
1.3
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 30V,
Turn-Off Delay Time
ID=1A, RG = 3.3Ω
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
VGS=0V, IS=20A
Voltage
nS
V
Reverse Recovery Time
IS = 40A, TJ=25 C
tfr
36
nS
Reverse Recovery Charge
dI/dt = 100A/us
Qfr
45
nC
o
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/6
Version: B13
TSM80N08
75V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Gate Threshold Voltage
Gate Source On Resistance
Drain-Source On Resistance
Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
3/6
Version: B13
TSM80N08
75V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Power Derating
Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance
Capacitance
Gate Charge
4/6
Version: B13
TSM80N08
75V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
5/6
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
6.350
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
Version: B13
TSM80N08
75V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: B13