ONSEMI DTC144TM3

MUN2240, DTC144TM3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
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This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN CONNECTIONS
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAMS
XX MG
G
SC−59
CASE 318D
STYLE 1
1
MAXIMUM RATINGS (TA = 25°C)
XX M
1
SOT−723
CASE 631AA
STYLE 1
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
(Note: Microdot may be in either location)
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
*Date Code orientation may vary depending
upon manufacturing location.
Rating
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 0
1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Publication Order Number:
DTC144T/D
MUN2240, DTC144TM3
Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping†
MUN2240T1G, SMUN2240T1G
8T
SC−59
3,000 / Tape & Reel
DTC144TM3T5G
8T
SOT−723
8,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PD, POWER DISSIPATION (mW)
300
250
200
150
(1) SC−59; Minimum Pad
(2) SOT−723; Minimum Pad
(1) (2)
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
230
338
1.8
2.7
mW
THERMAL CHARACTERISTICS (SC−59) (MUN2240)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
540
370
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
264
287
°C/W
TJ, Tstg
−55 to +150
°C
260
600
2.0
4.8
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC144TM3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
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2
PD
mW/°C
RqJA
480
205
°C/W
TJ, Tstg
−55 to +150
°C
MUN2240, DTC144TM3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
0.2
50
−
−
50
−
−
160
350
−
−
−
0.25
−
0.6
−
−
3.0
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
Input Resistor
R1
32.9
47
61.1
Resistor Ratio
R1/R2
−
−
−
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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3
Vdc
Vdc
Vdc
Vdc
Vdc
kW
MUN2240, DTC144TM3
TYPICAL CHARACTERISTICS − MUN2240, DTC144TM3
1000
150°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
1
0.1
150°C
25°C
−55°C
0.01
0
10
20
10
30
40
1
50
1
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
3.2
IC, COLLECTOR CURRENT (mA)
100
f = 10 kHz
IE = 0 V
TA = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
IC, COLLECTOR CURRENT (mA)
10
20
30
40
−55°C
25°C
10
1
0.1
VO = 5 V
0.01
50
150°C
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
−55°C
VCE = 10 V
3.6
0
25°C
100
10 −55°C
25°C
1
150°C
0.1
VO = 0.2 V
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
28
MUN2240, DTC144TM3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
MUN2240, DTC144TM3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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For additional information, please contact your local
Sales Representative
DTC144T/D