ETC MT6223

MT6223(P) Phone Design Notice
2007/07/03
WCP/SA/RP1
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MT6223 Package
Body Size
Ball Count
Ball Pitch
Ball Dia.
Package
Thk.
Stand Off
Substrate
Thk.
D
E
N
e
b
A (Max.)
A1
C
9.0
9.0
224
0.5
0.275
1.2
0.21
0.36
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MT6223 vs MT6205
MT6205B
MT6223
Parallel I/F
X
8/9-bit
Serial I/F
V
V
Input
X
Stereo
Recording
X
Mono
Channel
X
2
Resolution
X
AC
I2C
X
V
I2S
X
V
Voice Link
X
DAI/PCM
Audio Link
X
I2S
EINT
X
4
Keypad
5x5
5x6
UART
2
(115.2kbps)
3
(921.6kps)
ADC
5
3(ext)+4(int)
SW Card
X
MT6223P
only
LCM I/F
FM
Radio
Audio
DAC
BT
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Keypad
VDD
(5 x 6 + o n e p o w e r -k e y ) k e y m a tr ix
COL0 COL1 COL2 COL3 COL4 COL5
R209
NC
PWRKEY
RESET
VMSEL
RSTCAP
VREF
D3
C2
E4
D2
B1
PWRKEY
/SYSRST
S16
C229
100n
LED_B
LED_G
LED_R
C231
100n
C249
100n
D e d ic a te d fo r P o w e r -k e y
KSW
[PWR/End]
G10
G9
H8
D4
COL6
ROW 4
1
1
1
1
1
1
1
ROW 3
1
1
1
1
1
1
1
ROW 2
1
1
1
1
1
1
1
ROW 1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
ROW 0
•MT6223 is 5x6 matrix
•COL6 is dedicated for POWER_KEY
(internal connection).
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B a se b a n d
P M IC
P M I C in te g r a te d B B c h ip
ADC
ADC channel
Function
Pin out
AUXADC_0
External ADC channel
M2
AUXADC_1
External ADC channel
M3
AUXADC_2
External ADC channel
N2
AUXADC_3
Internal reference voltage
x
AUXADC_4
ADC for Charger voltage detection
x
AUXADC_5
ADC for charging current sense
x
AUXADC_6
ADC for Battery Voltage detection
x
AUXADC_7
Auxiliary ADC channel 0 data register for TDMA event 0
x
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MT6223 Speech & Audio
Features
MT6205
MT6223
DSP
1
2
Speed
52MHz
104MHz
FR
V
V
HR
V
V
EFR
V
V
AU_FMINR
AMR FR
X
V
AU_OUT0_P
AMR HR
X
V
X
V
UL
X
V
DL
X
V
Noise
Suppression
X
V
Echo Cancellation
X
V
Echo Suppression
V
V
VR
X
V
MP3
X
V
WT 64Tones
X
V
M UX
Audio Amp-L
Audio
LCH-DAC
Audio
Signal
AU_MOUTR
M UX
Stereoto-Mono
AU_MOUTL
Audio
RCH-DAC
Audio Amp-R
AU_FMINL
FM/AM radio
chip
Stereoto-Mono
Voice Amp-0
Voice
Signal
Speech
Codec
Voice DAC
AU_OUT0_N
AU_VIN0_P
PGA
Voice ADC
M UX
Voice
Signal
AU_VIN0_N
AU_VIN1_N
CTM
Noise
Reduction
AU_VIN1_P
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LCD & Memory Card I/F
LCD IO
D8
D7
D6
D5
D4
D3
D2
D1
D0
Parallel IF
PD8
PD7
Pd6
PD5
PD4
PD3
PD2
PD1
PD0
Serial IF
SCLK
SDA
SA0
MCCM
MCDA
3
MCDA
2
MCDA
1
MCDA
0
MSDC IF
VDD
VDD
R811
47K
R813
47K
R809
47K
R812
47K
Push-To-Push
T-Flash Card
•LCD I/F can control 2 LCMs and 1
memory card at the same time.
R810
47K
J802
1
2
3
4
5
6
7
8
LCD2
LCD3
LCD4
MCCK
LCD0
LCD1
DAT2
CD/DAT3
CMD
VSS
VDD
VSS
CLK
VSS
VSS
Detect
DAT0
DAT1
•Memory Card I/F is MT6223P only.
9
10
11
12
200 R814
VR803 VR801
VR805
VR804
VR806
VR807
VR802
C805
4.7uF
MFIQ_CradIn
High : Card push out
Low : Card push in
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MFIQ_CardIn
TFRPN-00815-TP00
•For SW memory card, if EINT is
exhausted, it could uses MFIQ for
Card detection. Anyway MFIQ acts
when 26MHz system clock on.
PMU of MT6223
MT6305B
MT6318
MT6223
1
CHRIN
AC
CHRIN
2
GATEDRV
GDRVAC
GATEDRV
3
ISENSE
ISNENSE
ISENSE
4
BATSNS
VBAT
BATSENSE
5
BATDET
BAT_ON
BATDET
1.1 Charger Schematics
X (Through
6
CHRCNTL
7
CHRDET
SPI)
INT
BATUSE
8
(Li-ion and NiMH) X (Only Li-ion)
X (Share with
9
CHRIN)
CHRIN)
USB
Resistor)
X (External
12
Resistor)
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Total
8
X (Only Li-ion)
CHRIN)
X (Share with
GDRVUSB
X (External
11
X (Internal)
X (Share with
X (Share with
10
X (Internal)
VB_OUT
CHRIN)
X (Internal)
ISENSE
_OUT
X (Internal)
10
5
PMU of MT6223
1.2 Charger Current
MT6305B
MT6318
MT6223
Sense Resistor
0.4 Ohm
0.2 Ohm
0.2 Ohm
Pre-Charge
25
62.5
62.5
0
62.5
62.5
1
90
90
2
150
150
225
225
4
300
300
5
450
450
6
650
650
7
800
800
CC
3
400
For Layout:
Connect ISENSE and BATSNS directly to the two terminal of sense resistor
to get a precise charge current. Don’t connect BATSNS to other VBAT trace
near IC, which could cause charge current mismatch for over hundreds mA.
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PMU of MT6223
1.3 Charger Protection
MT6305B
MT6318
MT6223
OVP/OCP
Max. Charger Input
15V
15V
9V
30V
Charger OVP Point
9V
9V
7V
6.8V
Ext_OVP/OCP:
R201
0
U202
TO CHRIN
F201
1u (16V 0805)
FUSE(1A 0603)
C235
2
3
4
IN
OUT
VSS
ILIM
NC
VBAT
/fault
/CE
8
CHRIN
7
6
R205
1
VCHG
5
C205
1uF
25K
BQ24316
VBAT
R202
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220K
PMU of MT6223
2. LDO
LDO Current
MT6305B (mA)
MT6318 (mA)
MT6223 (mA)
VCORE
200
200
200
VA
150
150
125
VIO
100
100
100
VM
150
150
75
VTCXO
20
20
20
VSIM
20
20
20
VRF
X
X
250
VRTC
V
V
V
BAT_BACKUP
X
V
V
VUSB
X
20
X
VMC
X
250
X
VSW_A
X
50
X
VIBR
X
200
X
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PMU of MT6223
LDO-Capacitor Selection
LDO
VA
VRF
VTCXO
VCORE
VIO
VM
VSIM
VRTC
BAT_
_BACKUP
Output
Capacitor
4.7 uF
4.7 uF
1 uF
2.2 uF
1 uF
1 uF
1 uF
0.1uF
0.1 uF
X5R
X5R
X5R
X5R
X5R
X5R
X5R
X5R
X5R
VRF_SENSE layout notice
The VRF_SENSE pin should
connect to MT6139’s power in
pin directly to reduce the
voltage drop. And the
VRF_SENSE trace should be
protected by GND in layout.
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PMU of MT6223
3. SIM
5
C236
C243
GND
GND
3
CLK
RST
VCC
I/O
VPP
GND
GND
1
9
10
J219
C6
D6 SIMRST
B5 SIMCLK
A5 SIMIO
VSIM
GND
nc
nc
MT6318
MT6223
1
SIO
SIO
SIO
2
SRST
SRST
SRST
3
SCLK
SCLK
SCLK
4
SIMIO
SIMIO
X (Internal)
5
SIMRST
SIMRST
X (Internal)
6
SIMCLK
SIMCLK
X (Internal)
7
SIMVCC
SIMVCC
X (Internal)
8
SIMSEL
X (Through SPI)
X (Internal)
Total
8
7
3
2
4
6
VSIM
C241
nc
C246
2.2u/6.3V (X5R)
7
8
ID1A-6S-2.54SF
MT6305B
The equivalent capacitor on SIM
I/F must be under 100pF to
insure operation normally.
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PMU of MT6223
4. LED & Vibrator Driver
Driver
Current Capability
LED_R
25 mA
LED_G
25 mA
LED_B
25 mA
LED
150 mA
VIBRATOR
250 mA
•LED with PWM2 control duty cycle
•Vibrator/LED_X without PWM
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VRF Design Note
● Place a 4.7uF X5R capacitor close to PMU to keep stabilization and
performance
● Place a 4.7uF X5R capacitor close to RF transceiver to keep stabilization
and performance
● Keep VRF trace > 15mil
● Connect sense pin, VRF_SENSE, to RF’s power to reduce the voltage drop
due to layout and package.
● Protect VRF_SENSE with GND vias and planes.
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VTCXO Design Note
● Place a 1.0uF X5R bypass cap. and reserve a series 0402 0Ohm near PMU
● Place 1uF X5R//10pF bypass cap. and reserve a series 0402 0Ohm close to
TRx pin16 VCCSYN
● Protect VTCXO with GND vias and planes. If RF is on top layer, suggest to
put VTCXO routing on layer5 with good GND planes layer4 and layer6
● Do not place any power, analog, digital, and signal traces and vias parallel
or close to VTCXO routing.
● Keep VTCXO trace > 15mil
● Do not place VTCXO trace across layers under RF transceiver /Crystal
● Placement of PMU and RF transceiver as close as possible
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MT6223 Memory Support Plan
GPRS
NOR
RAM
16
64
32
8
32
16
Phone
Module
Intel Crystal (burst, deMux)
ST M36W0R6040U3 (64+16 AD MUX, Intel pinout)
Intel Crystal (burst, deMux)
Spansion PLJ (70/30/16)
ST M36W0R6050T1 (64+32 deMux)
ST M36W0R6050U0 (64+32 AD MUX)
Toshiba TV00560002DDGB (70/30/16)
Samsung K5N3208ATM (32+16, ADMUX, Spansion pinout)
Intel Crystal (burst, deMux)
Spansion NSJ (burst)
ST M36W0R5040U3 (32+16 AD MUX, Intel pinout)
Remark: Spansion VSK, ES at Aug/07, 2008 Q1 MP
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AD_Mux MCP
For AD_Mux MCP:
1.EA0~15 are share with ED0~15.
2.Baseband’s EA17 connect to AD_Mux
MCP EA16
U500
ED[0..15]
EA[17..22]
EA23
/ECS2
R511
0ohm
R512 0ohm(NC)
EA24
ED0
ED1
ED2
ED3
ED4
ED5
ED6
ED7
ED8
ED9
ED10
ED11
ED12
ED13
ED14
ED15
EA17
EA18
EA19
EA20
EA21
EA22
J14
J13
H11
H10
J9
J8
H7
H6
H13
H12
J11
J10
H9
H8
J6
J5
G6
F13
G12
F12
G7
F6
F14
G9
A/DQ0
A/DQ1
A/DQ2
A/DQ3
A/DQ4
A/DQ5
A/DQ6
A/DQ7
A/DQ8
A/DQ9
A/DQ10
A/DQ11
A/DQ12
A/DQ13
A/DQ14
A/DQ15
A16
A17
A18
A19
A20
A21
A22
A23
R-CRE
F-ACC
Vcc
VccQ
VccQ
CE_PS1#
R-UB#
R-LB#
RY_BY#f/RDY
CLK
AVD#
WE#
OE#
WP#/ACC
RESET#
CE_F1#
R-CRE: control register enable;
for cellularRAM only
K10
ECRE
F11
F9
G5
J12
VMEM
K9
/ECS1
E10
E9
F5
F8
G8
F10
H14
G11
G10
G13
/EUB
/ELB
R510
0ohm
EWAIT
ECLK
/EADV
/EWR
/ERD
VMEM_EMI
/WATCHDOG
/ECS0
Burst mode MCP must
check EWAIT, ECLK, and
/EADV
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Tools for MT6223
● Flash Tool/ MutilPortDownLoad : Ver_3.1.05
● META : Ver_5.3.8
● ATE : Ver_5.3.8
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PCB note_4Layer-I
•MT6223 0.5mm Pitch,top layer
的trace在ball與ball之間必需要使
用到3mil/3mil (線寬/線距),當走出
chip時,就要用4mil/4mil (線寬/線
距);雷射孔4/12 mil
(Drill/Diameter)。
•內圈ball:優先使用1-4層貫孔,走
內層,因內圈大多是GND pin,建
議要配合1-2層雷射孔一起使用。
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PCB note_4Layer-II
第4 圈ball:第一優先使用1-4層貫孔,
走內層。第二是使用1-2層雷射孔走L2
層。
第3圈ball:第一優先使用1-2層雷射
孔走L2層。第二是,若內圈有空
間,可使用1-4層貫孔,走內層。若
TOP走線有穿過ball,線寬與線距就
要3mil。
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PCB note_4Layer-III
第2圈ball:第一優先使用3mil
線寬的TOP走線,第二才是使
用1-2層的雷射孔,走L2層。若
TOP走線有穿過ball,線寬與
線距就要3mil。
第1圈ball:第一優先使用4mil
線寬的TOP走線,第二才是使
用1-2層的雷射孔,走L2層。若
TOP走線有穿過ball,線寬與
線距就要3mil。
6-layer
每圈ball的走線方式,大致與 4-layer相
同,因6-layer會多埋孔,所以不同在於第
4圈及內圈會以1-2層雷射孔加2-5層埋孔
為主。
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