28–32 GHz GaAs MMIC Driver Amplifier AA031P1-00 Features Chip Outline ■ Single Bias Supply Operation (5 V) 1.365 1.255 ■ 19 dB Typical Small Signal Gain ■ 16 dBm Typical P1 dB Output Power at 28 GHz 0.663 0.651 ■ 0.25 µm Ti/Pd/Au Gates 2.415 2.500 2.093 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.000 0.085 ■ 100% On-Wafer RF and DC Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s three-stage reactively-matched 28–32 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 28–32 GHz LMDS and digital radio bands. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 16 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 5 V) Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain F = 28–32 GHz G Input Return Loss F = 28–32 GHz RLI Output Return Loss F = 28–32 GHz RLO Output Power at 1 dB Gain Compression F = 28 GHz P1 dB 14 Saturated Output Power F = 28 GHz PSAT 15 ΘJC Thermal Resistance1 17 Typ.2 Max. Unit 145 200 mA -10 -6 dB -15 -10 19 16 dB dB dBm 18 dBm 101 °C/W 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 1/01A 1 28–32 GHz GaAs MMIC Driver Amplifier AA031P1-00 Gain & Return Losses (dB) Typical Performance Data 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 Bias Arrangement VD = 5 V S21 50 pF S11 S22 RF IN RF OUT S12 20 22 24 26 28 30 32 34 For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure. Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 5 V) Output Power (dBm), Gain (dB) .01 µF Circuit Schematic 20 19 Gain 18 17 16 15 14 Output Power @ 28 GHz Detail A 13 12 VDS 11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input Power @ 28 GHz (dBm) Typical Power Sweep (VDS = 5 V) RF IN 2 SEE DETAIL A Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 1/01A RF OUT