ALPHA AA035N1-00

28–36 GHz GaAs MMIC
Low Noise Amplifier
AA035N1-00, AA035N2-00
Features
Chip Outline
■ Dual Bias Supply Operation (4.5 V)
2.370
■ 2.8 dB Typical Noise Figure at 32 GHz
2.255
■ 12 dB Typical Small Signal Gain
1.598
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure
Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Description
0.116
2.690
2.417
2.059
1.701
1.343
0.985
0.627
0.269
Alpha’s two-stage balanced 28–36 GHz MMIC low noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha’s proven 0.25 µm low noise PHEMT technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process.
0.000
0.000
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
AA035N1-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA)
Parameter
Condition
Drain Current
Symbol
Min.
IDS
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain
Compression1
Max.
Unit
70
90
mA
F = 28–36 GHz
G
F = 32 GHz
NF
2.8
3.2
dB
F = 28–36 GHz
RLI
-17
-12
dB
F = 28–36 GHz
RLO
-20
-12
dB
F = 35 GHz
P1 dB
10
dBm
ΘJC
50
°C/W
Thermal Resistance2
10
Typ.3
12
dB
AA035N2-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA)
Parameter
Condition
Drain Current
Symbol
Min.
IDS
Small Signal Gain
Noise Figure
F = 28–36 GHz
G
9
Typ.3
Max.
Unit
70
90
mA
12
dB
F = 32 GHz
NF
3.0
3.8
dB
Input Return Loss
F = 28–36 GHz
RLI
-17
-12
dB
Output Return Loss
F = 28–36 GHz
RLO
-20
-12
F = 35 GHz
P1 dB
10
dBm
ΘJC
50
°C/W
Output Power at 1 dB Gain Compression1
Thermal Resistance2
dB
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 7/00A
1
28–36 GHz GaAs MMIC Low Noise Amplifier
AA035N1-00, AA035N2-00
Typical Performance Data
20
14
10
12
100
10
S11
-10
-20
60
4
S22
Noise Figure
40
2
0
S12
-40
20
-2
-50
30
32
34
36
38
80
6
-30
ID
-4
-0.5
40
0
-0.4
-0.3
-0.2
-0.1
0
Frequency (GHz)
(VG)
Typical Small Signal Performance
S-Parameters (VD = 4.5 V)
Typical 35 GHz Noise Figure and
Gain as a Function of Gate Voltage (VG)
Absolute Maximum Ratings
5.0
Characteristic
4.5
Noise Figure (dB)
Gain
8
(dB)
(dB)
0
Drain Current (mA)
S21
120
Value
Operating Temperature (TC)
-55°C to +90°C
4.0
Storage Temperature (TST)
-65°C to +150°C
3.5
Bias Voltage (VD)
5.5 VDC
Power In (PIN)
16 dBm
Junction Temperature (TJ)
175°C
3.0
2.5
2.0
30
32
34
36
38
40
Bias Arrangement
.01 µF 50 pF
Frequency (GHz)
Typical Noise Figure Performance
vs. Frequency
50 pF .01 µF
VG
VD = 4.5 V
RF IN
RF OUT
VG
VD = 4.5 V
.01 µF 50 pF
50 pF .01 µF
For biasing on, adjust VG from zero to the desired value
(-0.3 V typically is optimum). Then adjust VD from zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 7/00A
28–36 GHz GaAs MMIC Low Noise Amplifier
AA035N1-00, AA035N2-00
Circuit Schematic
G
D
Detail A
VG
G
RF IN
VD
D
G D
RF OUT
SEE
DETAIL
A
G
D
G D
VG
VD
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 7/00A
3