TIP125, TIP126, TIP127 PNP Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Version 2004-07-01 Collector current – Kollektorstrom 5A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1 = B1 2 = C2 3 = E2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP125 TIP126 TIP127 Collector-Emitter-voltage B open - VCE0 60 V 80 V 100 V Collector-Base-voltage E open - VCB0 60 V 80 V 100 V Emitter-Base-voltage C open - VEB0 50 V Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung TC = 25°C Ptot Ptot 2 W 1) 65 W Collector current – Kollektorstrom (dc) - IC 5A Peak Collector current – Kollektor-Spitzenstrom - ICM 8A Base current – Basisstrom (dc) - IB 120 mA Junction temperature – Sperrschichttemperatur Tj - 65…+ 150°C Storage temperature – Lagerungstemperatur TS - 65…+ 150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – – – – – – 500 nA 500 nA 500 nA – – – – – – 200 nA 200 nA 200 nA Collector-Emitter cutoff current – Kollektorreststrom IB = 0, - VCE = 30 V IB = 0, - VCE = 40 V IB = 0, - VCE = 50 V TIP125 TIP126 TIP127 - ICE0 - ICE0 - ICE0 Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 80 V IE = 0, - VCB = 100 V 1 TIP125 TIP126 TIP127 - ICB0 - ICB0 - ICB0 ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 1 Darlington Transistors TIP125, TIP126, TIP127 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – – 2 mA – – – – 2V 4V – – 2.5 V 1000 1000 – – – – 4 – – – – 200 pF Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IEB0 Collector saturation voltage – Kollektor-Sättigungsspg. 1) - IC = 3 A, - IB = 12 mA - IC = 5 A, - IB = 20 mA - VCEsat - VCEsat Base-Emitter on-voltage – Basis-Emitter-Spannung 1) - IC = 3 A, - VCE = 3 V - VBEon DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 3 V, - IC = 0.5 A - VCE = 3 V, - IC = 3 A hFE hFE Small signal current gain – Kleinsignal-Stromverstärkung - VCE = 4 V, - IC = 3 A, f = 1 MHz hfe Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 100 kHz CCB0 Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft junction to case – Sperrschicht zu Gehäuse Admissible torque for mounting Zulässiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 62.5 K/W 2) 2 K/W M4 9 ± 10% lb.in. 1 ± 10% Nm TIP120, TIP121, TIP122 Equivalent Circuit – Ersatzschaltbild B1 RthA RthC C2 T1 T2 E2 1 2 ) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 2