JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220-3L 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary Silicon Transistors 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W RθJc Thermal Resistance Junction to Case 1.92 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Output Capacitance TIP125,TIP126,TIP127 TIP120,TIP121,TIP122 Test conditions V(BR)CBO IC= 1mA,IE=0 VCEO(SUS) IC= 30mA,IB=0 ICBO ICEO Min Max 60 80 100 60 80 100 VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0 Unit V V 0.2 mA 0.5 mA IEBO VEB=5 V, IC=0 hFE(1) VCE= 3V, IC=0.5A 1000 hFE(2) VCE= 3V, IC=3 A 1000 VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA 2 4 V VBE VCE=3V, IC=3 A 2.5 V 300 200 pF Cob VCB=10V, IE=0,f=0.1MHz 2 mA B,Aug,2012 Typical Characteristics 10000 -5 o DC CURRENT GAIN IC -0.8mA -0.7mA -4 Ta=100 C hFE -1.0mA (A) VCE= -3V COMMON EMITTER Ta=25℃ -0.9mA COLLECTOR CURRENT hFE —— IC Static Characteristic -6 -0.6mA -3 -0.5mA -2 -0.4mA 1000 o Ta=25 C 100 -0.3mA -1 IB=-0.2mA -0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 10 -8 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=250 Ta=25℃ -1.4 -1.2 -1.0 -0.8 Ta=100℃ -0.6 -0.4 -100 COLLECTOR CURRENT VCEsat —— -1200 -1.8 -1.6 -10 (V) VBEsat —— IC -2.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) TIP126 IC -5000 -1000 (mA) IC β=250 -1000 -800 Ta=25℃ -600 -400 Ta=100℃ -200 -0.2 -0.0 -1 -10 -100 -1000 COLLECTOR CURRENT IC —— IC -0 -5000 -1 (mA) VBE 250 Cob / Cib —— -5000 -1000 IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 (pF) -1000 o o Ta=25 C 200 C Ta=100 C -100 CAPACITANCE IC (mA) -100 COLLECTOR CURRENT -5000 COLLECTOR CURRENT -10 -10 Ta=25℃ -1 150 100 Cob Cib 50 VCE=-3V -0.1 -0.0 -0.5 -1.0 -1.5 BASE-EMITTER VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (W) 3 —— -2.0 0 -0.1 -1 REVERSE VOLTAGE VBE(V) -10 V -20 (V) Ta 2 1 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Aug,2012