PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR (500V/0.38Ω/19A) 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current ID(pulse) ±76 A V GS ±30 V IAR 19 A E AS 245.3 mJ dV DS/dt dV/dt 20 5 kV/us kV/us P D ＠Ｔc=25℃ 95 W 2.16 W Symbols Items Drain-Source Voltage Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV/dt This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Maximum Power Dissipation PD @Ta=25℃ Operating and Storage Tch 150 ℃ Temperature range Tstg -55 ∼ +150 ℃ *1 *2 3)Electrical Characteristics (Tch=25℃ unless otherwise specified) min. typ. max. Units Drain-Source Breakdown Voltage Items BV DSS Symbols ID =250uA Test Conditions V GS=0V 500 --- --- V Gate Threshold Voltage V GS(th) ID =250uA V DS=V GS 3.0 --- 5.0 V V DS=500V Tch=25℃ --- --- 25 μA Zero Gate Voltage Drain Current IDSS V GS=0V Tch=125℃ --- --- 250 μA Gate-Source Leakage Current IGSS V GS=±30V V DS=0V --- --- 100 μA Drain-Source On-State Resistance RDS(on) ID =9.5A VGS=10V --- --- 0.38 Ω Input Capacitance Ciss V DS=25V --- 1580 2370 Output Capacitance Coss V GS=0V --- 240 360 pF Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Crss Qg Qgs f=1MHz Vcc=250V ID =19A ------- 12 32 16 18 48 24 nC Gate to Drain (Miller) Charge Qgd V GS=10V Avalanche Capability IAV L=1.25mH Diode Forward On-Voltage V SD IF =19A,VGS=0V,Tch=25℃ Tch=25℃ --- 12 18 19 --- --- A --- 1.0 1.5 V min. typ. max. 1.316 58.0 Units ℃ /W ℃ /W 4) Thermal Characteristics Items Channel to Case Channel to Ambient Symbols Rth(ch-c) Rth(ch-a) Test Conditions *1 L=1.25mH,Vcc=50V *2 I F ≤ -I D ,-di/dt=50A/ µs,Vcc ≤ BVDSS,Tch ≤ 150 °C DATE NAME APPROVED Fuji Electric Co.,Ltd. CHECKED Sep.-02-'02 REVISIONS MA4LE DWG.NO. DRAWN Sep.-02-'02 MT5F12582 1/1