HITACHI 2SC2735

2SC2735
Silicon NPN Epitaxial
Application
UHF/VHF Local oscillator, frequency converter
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC2735
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
3
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
40
—
—
Collector output capacitance
Cob
—
0.85
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
600
1200
—
MHz
VCE = 10 V, IC = 10 mA
Oscillating output voltage
VOSC1
—
210
—
mV
VCC = 12 V, IC = 7 mA,
f OSC = 300 MHz
VOSC2
—
130
—
mV
VCC = 12 V, IC = 7 mA,
f OSC = 930 MHz
Conversion gain
CG
—
21
—
dB
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f OSC = 230 MHz (0dBm)
Noise figure
NF
—
6.5
—
dB
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f OSC = 230 MHz (0dBm)
Note: Marking is “JC”.
2
VCE = 10 V, IC = 10 mA
2SC2735
DC Current Transfer Ratio
vs. Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
160
120
80
40
VCE = 10 V
0
1
100
150
50
Ambient Temperature Ta (°C)
0
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
2.0
1.6
1.2
0.8
VCE = 10 V
0
1
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance
vs. Collector to Base Voltage
Gain Bandwidth Product
vs. Collector Current
0.4
10
20
2
5
Collector Current IC (mA)
50
2.0
IE = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC2735
Base Time Constant
vs. Collector Current
2.0
20
Emitter Common
IC = 0 V
f = 1 MHz
1.6
1.2
0.8
0.4
Base Time Constant rbb' CC (ps)
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
16
12
8
4
0
1
10
20
50
2
5
Collector to Base Voltage VCB (V)
0
500
400
VCC = 12 V
fosc = 300 MHz
300
200
100
0
2
4
6
8
Collector Current IC (mA)
4
8
12
16
Collector Current IC (mA)
20
Oscillating Output Voltage
vs. Supply Voltage
Oscillating Output Voltage Vosc1 (mV)
Oscillating Output Voltage Vosc1 (mV)
Oscillating Output Voltage
vs. Collector Current
4
VCB = 10 V
f = 31.8 MHz
10
250
200
150
100
50
0
IC = 7 mA
fosc = 300 MHz
4
8
12
16
Supply Voltage VCC (V)
20
2SC2735
Oscillating Output Voltage
vs. Supply Voltage
200
Oscillating Output Voltage Vosc2 (mV)
Oscillating Output Voltage Vosc2 (mV)
Oscillating Output Voltage
vs. Collector Current
160
120
80
40
0
VCC = 12 V
fosc = 930 MHz
2
4
6
8
Collector Current IC (mA)
200
160
120
80
40
0
10
Conversion Gain vs. Collector Current
VCC = 12 V
f = 200 MHz
fosc = 230 MHz
(0 dBm)
Noise Figure NF (dB)
Conversion Gain CG (dB)
20
20
15
10
5
0
12
16
4
8
Supply Voltage VCC (V)
Noise Figure vs. Collector Current
25
20
IC = 7 mA
fosc = 930 MHz
2
4
6
8
Collector Current IC (mA)
10
16
12
8
4
0
VCC = 12 V
f = 200 MHz
fosc = 230 MHz
(0 dBm)
1
2
3
4
Collector Current IC (mA)
5
5
2SC2735
VOSC2 UHF Oscillating Output Voltage Test Circuit
L3
VCC
1,000 p
470
Ferrite Bead
1.2 p
L1
D.U.T.
120 k
VT
1,000 p
9p
L2
330
2,200 p
ISV70
6.8 k
1,000 p
Vosc Output
VBB
Unit C : F
R:Ω
Dimensions of Cavity
10
26
15
10
8
5
L2
L1
(Dimensions in mm)
(Dimensions in mm)
L1 : Polyurethane Coated Copper Wire φ1.0 mm
L2 : Polyurethane Coated Copper Wire φ0.8 mm
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω (1/4W)Resistor.
Test Frequency : fosc = 930 MHz
Test Equipment : YHP 4271A Vector Voltmeter
6
2SC2735
VOSC1 VHF Oscillating Output Voltage Test Circuit
VBB
1,000 p
2.2 k
Vosc Output
200 µ
VCC
1.5 p
D.U.T.
7p
4,700 p
12 p
1.1 M
5.6 p
L1
4,700 p
VT
20,000 p
4,700 p
200
1SV70
fosc Monitor
Unit C : F
R:Ω
L:H
L1 : Inside dia φ3 mm, φ3 mm Enameled Copper Wire 12 Turns
Test Frequency : fosc = 300 MHz
7
2SC2735
VHF Conversion Gain : Noise Figure Test Circuit
2,200 p
fosc = 230 MHz
(0 dBm)
1.5 p
VCC
560
f = 200 MHz
Ferrite Bead
L4
27 p
L2 56 p
foat = 30 MHz
RL = 50 Ω
D.U.T.
L1
4.2 p
L3
2,200 p
330
18 p
80 p
2,200 p
Unit C : F
R:Ω
VBB
L1 : Inside dia φ5 mm, φ0.5 mm Enameled Copper Wire 4 Turns
L2 : Inside dia φ4 mm, φ0.5 mm Enameled Copper Wire 4 Turns
L3 : Inside dia φ3 mm, φ0.2 mm Enameled Copper Wire 6 Turns
L4 : Outside dia φ5 mm Bobbin, φ0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead.
8
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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