HITACHI 2SD1367

2SD1367
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1001
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
16
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
2
A
3
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
16
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 16 V, IE = 0
Emitter cutoff current
I EBO
0.1
µA
VEB = 5 V, IC = 0
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
—
1
100
—
500
VCE(sat)
—
0.15
0.3
V
I C = 1 A, IB = 0.1 A, Pulse
Base to emitter saturation
voltage
VBE(sat)
—
0.9
1.2
V
I C = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
fT
—
100
—
MHz
VCE = 2 V, IC = 10 mA
Collector output capacitance
Cob
—
20
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1367 is grouped by h FE as follows.
Mark
BA
BB
BC
hFE
100 to 200
160 to 320
250 to 500
2
VCE = 2 V, IC = 0.1 A, Pulse
2SD1367
Typical Output Characteristics
100
1.2
0.2
Collector Current IC (mA)
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
0.8
0.4
80
0.2
60
0.15
40
0.1
0.05 mA
20
IB
0
0
50
100
150
Ambient Temperature Ta (°C)
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
1,000
15
10
1.2
5 mA
0.8
0.4
IB
Collector Current IC (mA)
20
1.6
0
=0
Typical Transfer Characteristics
Typical Output Characteristics
2.0
Collector Current IC (A)
0.25
VCE = 2 V
300
100
Ta = 75°C
30
25
10
–25
3
=0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage VCE (V)
1
0
0.2
0.4
0.6
0.8
Base to Emitter Voltage VBE (V)
1.0
3
2SD1367
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
30,00
Pusle
VCE = 2 V
Ta = 75°C
Collector to Emitter Saturation Voltage
VCE (sat) (V)
Base to Emitter Saturation Voltage
VBE (sat) (V)
DC Current Transfer Ratio hFE
10,000
25
1,000
300
–25
100
30
10
1
3
10
30
100 300
Collector Current IC (mA)
1,000
3.0
VBE (sat)
1.0
0.3
lC = 10 lB
0.1
0.03
VCE (sat)
0.01
0.003
3
10
30
100 300 1,000 3,000
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
4
1,000
300
f = 1 MHz
IE = 0
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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