2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK D 12 3 1. Source 2. Drain 3. Gate G S 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 300 mA 1.2 A Note1 Drain peak current I D(pulse) Body-drain diode reverse drain current I DR 300 mA Channel dissipation Pch 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±5 µA VGS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.3 — 2.3 V I D = 10µA, VDS = 5 V Static drain to source on state RDS(on) — 1.26 1.44 Ω ID = 150 mA,VGS = 10 V Note 2 resistance RDS(on) — 2.8 3.44 Ω ID = 50 mA,VGS = 4 V Note 2 Forward transfer admittance |yfs| 145 220 — mS ID = 150 mA, VDS =10 V Note 2 Input capacitance Ciss — 6 — pF VDS = 10 V Output capacitance Coss — 18 — pF VGS = 0 Reverse transfer capacitance Crss — 2 — pF f = 1 MHz Turn-on delay time t d(on) — 200 — ns I D = 150 mA, VGS = 10 V Rise time tr — 600 — ns RL = 66.6 Ω Turn-off delay time t d(off) — 1100 — ns Fall time tf — 1100 — ns Note: 2 2. Pulse test See characteristics curves of 2SK3288 2SK3380 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 5 I D (A) 300 Drain Current Channel Dissipation Pch (mW) 400 200 100 0 50 100 Ambient Temperature 150 Ta ( °C) 200 2 1.0 10 µs 100 µs 0.5 PW 1ms =1 0.2 0.1 0m s DC 0.05 0.02 Operation in this area 0.01 is limited by RDS(on) 0.005 0.002 0.001 Ta=25 °C 0.0005 0.05 0.1 0.2 0.5 1.0 2 Op er 5 Drain to Source Voltage at ion 10 20 50 VDS (V) 3 2SK3380 Package Dimensions Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 1.27 1.27 2.54 4 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 Hitachi Code EIAJ JEDEC SPAK – – 2SK3380 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 5