2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 180 V Gate to source voltage VGSS ±20 V Drain current ID 8 A 1 Channel dissipation Pch* 120 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Power output PO 140 180 — W VDD = 80 V, f = 28 MHz, Drain efficiency η — 80 — % I DQ = 0.1 A, Pin = 5 W Drain to source breakdown voltage V(BR)DSS 180 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) 0.5 — 3.0 V I D = 1 mA, VDS = 10 V*1 Drain current I DSS — — 1.0 mA VDS = 140 V, VGS = 0 Drain to source saturation voltage VDS(on) — 3.8 6.0 V I D = 4 A, VGS = 10 V*1 Forward transfer admittance |yfs| 0.9 1.25 — S I D = 3 A, VDS = 20 V*1 Input capacitance Ciss — 440 — pF VGS = 5 V, VDS = 0, f = 1 MHz Output capacitance Coss — 75 — pF VGS = –5 V, VDS = 50 V, f = 1 MHz Reverse transfer capacitance Crss — 0.5 — pF VGD = –50 V, f = 1 MHz Power output PO — 100 — WPEP VDD = 80 V, f = 28 MHz, Power gain PG — 17 — dB ∆f = 20 kHz, IMD ≤ –30 dB Note: 1. Pulse Test CAUTION: OPERATING HAZARDS Beryllium Oxide Ceramics have been employed in these products. Since dust or fume of the material is highly poison to the human body, please do not treat them mechanically or chemically in the manner which might expose them to the air. And it should never be thrown out with general industrial or domestic waste. 2 2SK410 Figure 1 Power vs. Temperature Derating Figure 2 Maximum Safe Operation Area 3 2SK410 Figure 3 Typical Output Characteristics Figure 4 Typical Transfer Characteristics 4 2SK410 Figure 5 Forward Transfer Admittance vs. Drain Current Figure 6 Input Capacitance vs. Gate to Source Voltage 5 2SK410 Figure 7 Output Capacitance vs. Drain to Source Voltage Figure 8 Output Power, Drain Efficiency vs. Input Power 6 2SK410 Figure 9 Output Power vs. Input Power (2 Tones) Figure 10 Inter-Modulation Distortion vs. Output Power 7 2SK410 Figure 11 28 MHz Pout Test Circuit 8 2SK410 Package Dimensions Unit: mm 9 2SK410 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10