HITACHI HZT33

HZT33
Monolithic IC Zener Diode for Temperature Compensation
ADE-208-135B(Z)
Rev 2
Nov. 1999
Features
• Lower temperature coefficient of the reference voltage. (γz=±1 mV/°C typ)
• Lower dynamic resistance.
Ordering Information
Type No.
Mark
Package Code
HZT33
Type No.
DO-35
Outline
1
HZT
33
2
Type No.
Cathode band
1. Cathode
2. Anode
HZT33
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
1
Value
Unit
200
mW
Power dissipation
Pd *
Operation temperature
Topr
-20 to +75
°C
Storage temperature
Tstg
-40 to +175
°C
Note: 1. Value at Ta = 75°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener Voltage
VZ
31.0
—
35.0
V
I Z = 5mA
Dynamic resistance
rd
—
—
25.0
Ω
I Z = 5mA
Temperature coefficient
γZ
—
mV/° C
I Z = 5mA
Ta = −20 to 25 to 75°C
Note: 1. Absolute Value
2
—
1*
1
HZT33
Main Characteristic
10-2
500
5mm
2.5 mm
3 mm
400
Printed circuit board
100 ×180 ×1.6t mm
Quality: paper phenol
Ta=25°C
-3
Power Dissipation P d (mW)
Zener Current Iz (A)
10
10-4
300
200
100
-5
10
0
25
30
Zener Voltage V Z (V)
Fig.1 Zener Current Vs. Zener voltage
35
0
50
100
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation Vs. Ambient Temperature
3
HZT33
Package Dimensions
Unit: mm
4.2 Max
26.0 Min
φ 0.5
φ 2.0
26.0 Min
Hitachi Code
JEDEC
EIAJ
M ass
4
DO-35
Conforms
Conforms
0.13 g
HZT33
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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