ETC HZM3.3WA

HZM3.3WA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-1458A (Z)
Rev.1
Nov. 2002
Features
• HZM3.3WA has two devices, and can absorb surge.
• MPAK Package is suitable for high density surface mounting.
Ordering Information
Type No.
Laser Mark
Package Code
HZM3.3WA
33A
MPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode
2. Cathode
3. Anode
HZM3.3WA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
1
Value
Unit
200
mW
Power dissipation
Pd *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note
1. Two device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
3.10
—
3.50
V
IZ = 5 mA, 40 ms pulse
Reverse current
IR
—
—
20
µA
VR = 1.0 V
Dynamic resistance
rd
—
—
130
Ω
IZ = 5 mA
—
30
—
—
kV
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
ESD-Capability *
2
Notes: 1. Per one device.
2. Failure criterion ; IR > 20 µA at VR = 1.0 V.
Rev.1, Nov. 2002, page 2 of 6
HZM3.3WA
Main Characteristic
250
10
Power Dissipation Pd (mW)
6
4
2
0
0
1
2
3
4
200
Cu Foil
Printed circuit board
25 × 62 × 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
150
100
50
0
50
0
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (˚C)
Fig.1 Zener current vs. Zener voltage
Fig.2 Power Dissipation vs. Ambient Temperature
Nonrepetitive Surge Reverses Power PRSM (W)
Zener Current IZ (mA)
8
0.8mm
1.0mm
104
PRSM
t
10
3
Ta = 25°C
nonrepetitive
102
10
1.0
10–5
10–4
10–3
Time t (s)
10–2
10–1
1.0
Fig.3 Surge Reverse Power Ratings
Rev.1, Nov. 2002, page 3 of 6
HZM3.3WA
Transient Thermal Impedance Zth (°C/W)
104
103
102
10
1.0
10-2
10-1
1.0
Time t (s)
10
Fig.4 Transient Thermal Impedance
Rev.1, Nov. 2002, page 4 of 6
102
103
HZM3.3WA
Package Dimensions
As of July, 2002
2.8
+ 0.2
– 0.6
1.5 ± 0.15
0.3
2.8 +– 0.1
(0.65)
1.9 ± 0.2
0 – 0.1
(0.3)
(0.95) (0.95)
+ 0.10
0.16 – 0.06
+ 0.2
1.1 – 0.1
0.10
3–0.4 +– 0.05
(0.65)
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MPAK
—
Conforms
0.011 g
Rev.1, Nov. 2002, page 5 of 6
HZM3.3WA
Disclaimer
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.1, Nov. 2002, page 6 of 6