ETC 1617AB15

1617AB15
15 Watts PEP, 26 Volts, Class AB
Linear 1600 - 1700 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1617AB15 is a COMMON EMITTER transistor capable of providing
15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz.
This transistor is specifically designed for SATCOM BASE STATION
amplifier applications. It includes Input prematching and utilizes Gold
metalization and HIGH VALUE EMITTER ballasting to provide high
reliability and supreme ruggedness.
55CW
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
58 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
LVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
60 Volts
27 Volts
3.5 Volts
6.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150 oC
+ 200 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
P-1dB
Pg
IMD3
VSWR
Power Out 1 dB comp pt.
Power Gain
Intermod. distortion -3rd
Load Mismatch Tolerance
BVces
LVceo
BVebo
Ices
hFE
Cob
Collector to Emitter Breakdown
Collector to EmitterBreakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
θjc
TEST CONDITIONS
MIN
TYP
F =1700 MHz
Icq = 100 mAmpsVcc= 26V
15 W PEP, Two Tone
15
10.0
12
-32
6:1
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 26 Volts
60
27
3.5
Vce = 5 V, Ic =0.5 A
F =1 MHz, Vcb = 28 V
20
o
Tc = 25 C
MAX
10
100
20
3.0
UNITS
Watt
dB
dBc
Volts
Volts
Volts
mA
pF
C/W
o
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120