1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package. 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 135 Watts 50 Volts 3.5 Volts 12 A - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance ηc VSWR1 BVces BVebo HFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS F = 1750-1850 MHz Vcb = 28 Volts Pin = 7 Watts As Above F = 1850MHz, Pin = 7 W Ic = 20 mA Ie = 15 mA Vce = 5 V, Ic = 1 A F = 1 MHz, Vcb = 28V MIN TYP MAX 35 7 7.0 40 UNITS Watt Watt dB % 10:1 50 3.5 10 Volts Volts 100 1.3 pF C/W o 72034 Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1819-35 August 1996