High Speed GaAlAs Infrared Emitter OPE5687HP DIMENSIONS (Unit : mm) 5.7 5.0 24.0 Min 1.3 Max FEATURES • Ultra high-speed : 25ns rise time • 880nm wavelength • Wide beam angle • Low forward voltage • High power and high reliability • Available for pulse operating 8.7 7.7 The OPE5687HP is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. 2-□0.5 2.0 2.5 APPLICATIONS • Emitter of IrDA • IR Audio and Telephone • High speed IR communication • IR LANs • Available for wireless digital data transmission Anode Cathode Tolerance : ±0.2mm STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS (Ta=25°C ) Item Symbol Rating Power Dissipation PD 150 Forward current IF 100 Pulse forward current *1 IFP 1.0 Reverse voltage VR 4.0 Operating temp. Topr. -25~ +85 *2 Soldering temp. Tsol. 260. *1 .Duty ratio = 1/100, pulse width=0.1ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Symbol Conditions Forward voltage Reverse current Capacitance Radiant intensity Power VF IR Ct Ie Po IF=50mA VR=4V f=1MHz IF=50mA IF=100mA Peak emission wavelength Spectral bandwidth 50% Half angle λp ∆λ ∆θ Optical rise & fall time(10%~90%) tr/tf Cut off frequency *3 fc Unit mW mA A V °C °C (Ta=25°C) Min. Typ. 1.5 Max. Unit 2.0 10 V µA 20 50 35 mW/ mW IF=50mA IF=50 IF=50 880 45 ±22 nm nm deg. IF=50 IF=50mA DC +10mA p-p 25/15 ns 14 MHz 25 20 *3 . 10logPo(fc MHz)/Po(0.1 MHz)=-3 OPE5687HP High Speed GaAlAs Infrared Emitter z FORWARD CURRENT Vs. AMBIENT TEMP. z Ta=25 Ta=25 80 200 100 50 30 60 10 5 100 3 40 1 0.5 0.3 0.1 20 0 RADIANT INTENSITY Vs. FORWARD CURRENT. 1 -20 0 20 40 60 80 100 Ambient Temperature Ta( ) z RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA z 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 Ta=25 0.8 3 2 0.6 1 0.8 0.5 0.3 0.2 0.1 -20 0.4 0.2 0 20 40 60 80 100 Ambient Temperature Ta( ) z FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Ta=25 50 0.0 700 750 800 850 900 950 Emission Wavelength λ(nm) z ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 30 20 -30° -10° 0° 10° 20° 50° -60° 60° 70° -70° 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward Voltage VF(V) -80° -90° 1.0 30° 40° -40° -50° 10 5 4 3 2 1 -20° 0.5 0 0.5 1.0 Relative Radiant intensity 80° 90°