High Speed GaAlAs Infrared Emitter OPE5985 DIMENSIONS (Unit : mm) The OPE5985 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 package and has wide beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. 3.0 3.8 5.4 4.6 0.3 23.0 Min 0.8 Max FEATURES • High speed : 25ns rise time • 850nm wavelength • Wide beam angle • Low forward voltage • High power and high reliability • Available for pulse operating 2-0.5 2.0 2.5 APPLICATIONS • Emitter of IrDA • IR Audio and Telephone • High speed IR communication • IR LANs • Available for wireless digital data transmission Anode Cathode Tolerance : ±0.2mm STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power Dissipation PD 80 Forward current IF 60 Pulse forward current IFP 0.5 Reverse voltage VR 5.0 Operating temp. Topr. -20~ +70 Tsol. 240. Soldering temp. 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS Item Symbol Forward voltage VF Reverse current IR Capacitance Ct Radiant intensity Ie p tr/tf Peak emission wavelength Spectral bandwidth 50% Half angle Optical rise & fall time(10%~90%) Cut off frequency *3 . 10logPo(fc MHz)/Po(0.1 MHz)=-3 *3 fc (Ta=25) Unit A °C °C Conditions IF=50 VR=5V f=1 IF=50 B Rank C Rank IF=50 IF=50 IF=40 IF=50 IF 11 Min. 15 40 55 Typ. 1.5 20 ~ ~ ~ 850 45 ±25 25/13 Max. 2.0 10 14 (Ta=25) Unit V µ / deg. ns MHz OPE5985 High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. Ta=25 Ta=25 20 10 5 3 100 80 1 0.5 0.3 60 40 0.1 0.05 0.03 0.01 20 0 -20 RADIANT INTENSITY Vs. FORWARD CURRENT. 0 20 40 60 80 Ambient Temperature Ta( ) 100 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 IF=50mA Ta=25 0.8 3 2 0.6 1 0.8 0.5 0.3 0.2 0.1 0.4 0.2 -20 0 20 40 60 80 0.0 700 100 Ambient Temperature Ta( ) 100 FORWARD CURRENT Vs. FORWARD VOLTAGE 50 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 Ta=25 30 20 -30° -20° -10° 0° 10° 20° 30° 40° -40° -50° 10 5 4 3 2 1 1.0 750 800 850 900 950 Emission Wavelength (nm) 50° -60° 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 12 60° -70° 70° -80° -90° 1.0 80° 90° 1.0 0.5 0 0.5 Relative Radiant intensity