MOC8100 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending 1 2 6 5 3 4 1.2 l EN60950 approval pending 7.62 6.62 7.62 4.0 3.0 DESCRIPTION 13° Max 0.5 The MOC8100 optically coupled isolator consists of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Low Input Current 1mA IF l High Current Transfer Ratio (50% min) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-base Voltage BVEBO Power Dissipation 30V 70V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92198m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) 30 70 6 Output Collector Current ( IC ) 0.5 0.3 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Note 1 Note 2 10 V V µA IF = 10mA IR = 10µA VR = 6V 25 10 V V V nA nA IC = 1mA ( note 2 ) IC = 100µA IE = 100µA VCE = 5V VCE = 5V mA mA 1mA IF , 5V VCE 1mA IF , 5V VCE ( TA = 0 to + 70°C ) V 1mA IF , 100µA IC VRMS VPK Ω See note 1 See note 1 VIO = 500V (note 1) µs µs µs µs VCC = 10V , IC= 2mA RL = 100Ω , fig 1 VCC = 10V , IC= 2mA RL = 100Ω , fig 1 0.5 5300 7500 5x1010 Input-output Isolation Resistance RISO Turn-on Time Turn-off Time Output Rise Time Output Fall Time 1.4 ton toff tr tf 20 20 4 6 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100Ω tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB92198m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 -30 0 25 50 75 100 8 5mA 4 2mA 1mA 0 2 4 6 8 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature CE(SAT) (V) Ambient temperature TA ( °C ) 60 50 40 30 20 10 0 -30 Collector-emitter saturation voltage V Forward current I F (mA) IF = 10mA 12 125 80 0.28 0.24 IF = 1mA IC = 100µA 0.20 0.16 0.12 0.08 0.04 0 Ambient temperature TA ( °C ) 0 25 50 75 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 0 25 50 75 100 125 10 -30 100 1.4 1.5 IF = 1mA VCE = 5V Relative current transfer ratio Relative current transfer ratio 16 0 0 1.0 0.5 1.2 1.0 0.8 0.6 0.4 VCE = 5V TA = 25°C 0.2 0 0 -30 7/12/00 TA = 25°C 20 Collector current I C (mA) Collector power dissipation P C (mW) 200 0 25 50 75 Ambient temperature TA ( °C ) 100 0.1 0.2 0.5 1 2 5 Forward current IF (mA) DB92198m-AAS/A1