Preliminary Product Description Stanford Microdevices SGA-4263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA-4263 typically provides +29.3 dBm output IP3, 13.7 dB of gain, and +14.2 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. VD= 3.2 V, ID= 45 mA (Typ.) Gain (dB) -10 ORL -20 IRL 4 -30 0 Return Loss (dB) GAIN -40 0 1 2 3 4 Frequency (GHz) Sy mbol 5 Product Features Cascadable 50 Ohm Patented SiGe Technology 0 12 8 DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier High Gain : 12.7 dB at 1950 MHz Gain & Return Loss vs. Frequency 16 SGA-4263 6 Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Units Frequency Min. Ty p. Max. dB dB dB 850 M Hz 1950 M Hz 2400 M Hz 12.3 13.7 12.7 12.4 15.1 Output Pow er at 1dB Compression dBm dBm 850 M Hz 1950 M Hz 14.2 12.5 Output Third Order Intercept Point (Pow er out per tone = -5dBm) dBm dBm 850 M Hz 1950 M Hz 29.3 25.7 Bandw idth Determined by Return Loss (<-10dB) M Hz G P1dB OIP3 IRL Parameter Operates From Single Supply Low Thermal Resistance Package Small Signal Gain 3500 Input Return Loss dB 1950 M Hz 31.3 Output Return Loss dB 1950 M Hz 13.8 NF Noise Figure dB 1950 M Hz 3.7 VD Device Voltage V RTh Thermal Resistance ORL Test Conditions: VS = 8 V RBIAS = 110 Ohms °C/W ID = 45 mA Typ. TL = 25ºC 2.9 3.2 3.5 255 OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Sy mbol G Parameter Unit 100 Frequency (MHz) Frequency Frequency (MHz)(MHz) 500 850 1950 2400 3500 dB 14.1 13.9 13.7 12.7 12.4 11.3 29.5 29.3 25.7 23.6 Small Signal Gain OIP3 Output Third Order Intercept Point dBm P1dB Output Pow er at 1dB Compression dBm 14.1 14.2 12.5 11.3 IRL Input Return Loss dB 27.5 31.8 29.4 31.3 33.1 18.3 ORL Output Return Loss dB 23.4 22.0 21.7 13.8 12.2 11.7 S12 Reverse Isolation dB 17.7 18.3 18.5 19.0 19.0 18.2 NF Noise Figure dB 3.6 3.4 3.7 4.3 VSS== 88 VV V RBIAS = 110 Ohms R BIAS= 39 Ohms Test Conditions: 45 mA mA Typ. Typ. IIDD == 80 25ºC TTLL ==25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 0-10 dBm OIP dBm 50Ohms Ohms ZZSS== ZZLL==50 Noise Figure vs. Frequency 5 Noise Figure (dB) Absolute Maximum Ratings VD= 3.2 V, ID= 45 mA (Typ.) 4 TL=+25ºC 3 2 Parameter Absolute Limit Max. Device Current (ID) 90 mA Max. Device Voltage (VD) 5V Max. RF Input Pow er +8 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 1 Operation of this device beyond any one of these limits may cause permanent damage. TL=+25ºC 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth 3 OIP3 vs. Frequency P1dB vs. Frequency VD=3.2 V, ID= 45 mA (Typ.) 18 35 TL 15 P1dB (dBm) OIP3 (dBm) 30 VD= 3.2 V, ID= 45 mA (Typ.) 25 12 TL=+25ºC 9 20 TL=+25ºC 6 15 0 0.5 1 1.5 2 Frequency (GHz) 726 Palomar Ave., Sunnyvale, CA 94085 2.5 3 Phone: (800) SMI-MMIC 2 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier |S | vs. Frequency |S | vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) VD= 3.2 V, ID= 45 mA (Typ.) 21 20 11 0 -10 S11(dB) S21(dB) 15 10 5 TL 0 0 1 -30 +25°C -40°C +85°C 2 3 4 Frequency (GHz) -20 -40 5 6 0 1 5 |S | vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) VD= 3.2 V, ID= 45 mA (Typ.) 6 22 0 -10 S22(dB) -15 S12(dB) 2 3 4 Frequency (GHz) |S | vs. Frequency 12 -10 +25°C -40°C +85°C TL -20 -25 -30 0 1 2 3 4 Frequency (GHz) -30 +25°C -40°C +85°C TL 5 -20 +25°C -40°C +85°C TL -40 6 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 3 RF in CB 1,2 SGA-4263 6 RF out CB 4,5 Frequency (Mhz) Reference Designator Recommended Bias Resistor Values for ID=45mA Supply Voltage(VS) 6V RBIAS 62 8V 110 10 V 150 12 V 200 Note: RBIAS provides DC bias stability over temperature. VS RBIAS LC A42 CB 1 uF 1000 pF CD Mounting Instructions 1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes as shown. CB 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Pin # Function 3 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 6 5 4 1 GND A42 Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 6 Part Identification Marking The part will be marked with an A42 designator on the top surface of the package. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 2 3 For package dimensions, refer to outline drawing at www.stanfordmicro.com Caution: ESD sensitive 2,4,5 GND Sames as Pin 2 Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 Description Part N umber R eel Siz e D ev ices/R eel SGA-4263 7" 3000 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100640 Rev. B