Preliminary NGA-286 Product Description Sirenza Microdevices NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. 25 20 15 dB 10 5 0 1 2 3 4 5 Frequency GHz Sy mbol 6 7 OBSOLETE See Application Note AN-059 for Alternates Product Features High Gain: 14.8dB at 1950Mhz Cascadable 50 ohm: 1.3:1 VSWR Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Small Signal Gain vs. Frequency 0 DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier 8 Parameter Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Units Frequency Min. Ty p. 15.2 15.2 15.5 P1dB Output Pow er at 1dB Compression dBm 850 M Hz 1950 M Hz 2400 M Hz OIP3 Output Third Order Intercept Point dBm 850 M Hz 1950 M Hz 2400 M Hz 32.0 31.4 30.9 dB 850 M Hz 1950 M Hz 2400 M Hz 15.6 14.8 14.4 G Small Signal Gain Bandw idth Determined by Return Loss (>10dB) Input VSWR Output VSWR M Hz DC - 5000 M Hz 1.3:1 - DC - 5000 M Hz 1.3:1 Noise Figure dB VD Device Operating Voltage V ID Device Operating Current mA RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 75 Ohms ID = 50 mA Typ. TL = 25ºC 3800 - NF Max. °C/W 2000 M Hz 3.4 4.0 45 50 55 120 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101102 Rev OBS Preliminary OBSOLETE NGA-286 DC-6.0 GHz 4.0V GaAs HBT Key parameters, at typical operating frequencies: Test Condition Ty pical 25ºC Parameter (ID = 50mA, unless otherwise noted) Unit 500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 15.8 31.8 15.3 21.0 18.8 dB dBm dBm dB dB 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 15.6 32.0 15.2 20.0 18.8 dB dBm dBm dB dB 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 14.8 31.4 15.2 17.1 18.7 dB dBm dBm dB dB 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 14.4 30.9 15.5 16.0 18.6 dB dBm dBm dB dB Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (ID) 110 mA Max. Device Voltage (VD) 6V Max. RF Input Pow er +10 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101102 Rev OBS Preliminary OBSOLETE NGA-286 DC-6.0 GHz 4.0V GaAs HBT S-parameters over frequency, at 25ºC S21, ID =50mA, T=25ºC S12, ID =50mA, T=25ºC 25 0 20 -5 -10 15 dB dB -15 10 -20 5 -25 0 -30 0 1 2 3 4 5 6 7 0 8 1 2 Frequency GHz 0 -5 -5 -10 -10 -15 dB -15 -20 -20 -25 -25 -30 -30 1 2 3 4 5 6 7 8 0 6 7 8 1 2 3 4 5 6 7 8 Frequency GHz Frequency GHz 522 Almanor Ave., Sunnyvale, CA 94085 5 S22, ID =50mA, T=25ºC 0 0 4 Frequency GHz S11, ID =50mA, T=25ºC dB 3 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101102 Rev OBS Preliminary OBSOLETE NGA-286 DC-6.0 GHz 4.0V GaAs HBT Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 1 RF in 4 NGA-286 3 RF out CB 2 CB Frequency (Mhz) Reference Designator R ecommended B ias R esistor Values for ID=50mA R BIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS VS N2 CB 1000 pF LC 39 8V 82 10 V 120 12 V 160 Note: RBIAS provi des D C bi as stabi li ty over temperature. 1 uF RBIAS 6V Mounting Instructions CD 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an N2 designator on the top surface of the package. 3 4 N2 Pin # Function 1 RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. 2, 4 GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. 2 3 RF OUT/ RF output and bi as pi n. D C voltage i s BIAS present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. 1 Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 D escription Part N umber R eel Siz e D ev ices/R eel NGA-286 7" 1000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101102 Rev OBS Preliminary OBSOLETE NGA-286 DC-6.0 GHz 4.0V GaAs HBT PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101102 Rev OBS